NTMSD6N303R2SG ON Semiconductor, NTMSD6N303R2SG Datasheet - Page 5

• Manufacturer Part Number: NTMSD6N303R2SG
• Description: MOSFET N-CH 30V 6A 8-SOIC
• Manufacturer: ON Semiconductor
• Series: FETKY™r

Specifications of NTMSD6N303R2SG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 32 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 24V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
0.01
100
100
1600
1400
1200
1000
0.1
10
800
600
400
200
10
1
1
0
1
0.1
10
Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″
thick single sided) with
one die operating,
10 s max.
V
SINGLE PULSE
T
V
I
V
Figure 9. Resistive Switching Time Variation
C
D
GS
C
C
Figure 11. Maximum Rated Forward Biased
DD
GS
= 25°C
rss
= 6 A
V
iss
V
= 12 V
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
DS
= 15 V
= 10 V
GS
V
5
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 7. Capacitance Variation
= 0 V
R
R
THERMAL LIMIT
PACKAGE LIMIT
versus Gate Resistance
G
DS(on)
, GATE RESISTANCE (W)
0
Safe Operating Area
1.0
V
GS
VOLTAGE (VOLTS)
dc
LIMIT
= 0 V
V
5
DS
10
10 ms
10
C
C
C
10
oss
iss
rss
1.0 ms
15
T
J
= 25°C
20
t
t
d(off)
d(on)
http://onsemi.com
t
t
f
r
100
100
25
5
10
8
6
4
2
0
0
325
300
275
250
225
200
175
150
125
100
75
50
25
V
Drain−to−Source Voltage versus Total Charge
Q
6
5
4
3
2
1
0
0
DS
1
25
Q
0.5
2
Figure 12. Maximum Avalanche Energy versus
3
V
T
J
GS
Figure 10. Diode Forward Voltage versus
T
V
= 25°C
J
4
SD
Figure 8. Gate−to−Source and
, STARTING JUNCTION TEMPERATURE (°C)
= 0 V
Q
Q
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
g
2
50
Starting Junction Temperature
, TOTAL GATE CHARGE (nC)
6
0.6
8
75
Q
10
Current
T
0.7
12
100
14
V
I
T
D
16
GS
J
I
= 6 A
0.8
= 25°C
D
= 6 A
125
18 20
30
20
10
0
150
0.9