NTMS4872NR2G ON Semiconductor, NTMS4872NR2G Datasheet

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NTMS4872NR2G

Manufacturer Part Number
NTMS4872NR2G
Description
MOSFET N-CH 30V 6A 8-SOIC
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTMS4872NR2G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13.5 mOhm @ 10.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 4.5V
Input Capacitance (ciss) @ Vds
1700pF @ 15V
Power - Max
820mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTMS4872NR2G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
NTMS4872NR2G
Quantity:
500
NTMS4872N
Power MOSFET
30 V, 10.2 A, N−Channel, SO−8
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sq−in pad, 2 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2009
January, 2009 − Rev. 2
MAXIMUM RATINGS
THERMAL RESISTANCE MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
Power Dissipation R
(Note 1)
Continuous Drain
Current R
Power Dissipation R
(Note 2)
Continuous Drain
Current R
(Note 1)
Power Dissipation
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy
(T
I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – t v 10 s (Note 1)
Junction−to−Foot (Drain)
Junction−to−Ambient – Steady State (Note 2)
R
L
Low R
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
SOIC−8 Surface Mount Package Saves Board Space
This is a Pb−Free Device
Disk Drives
DC−DC Converters
Printers
J
qJC
= 7.0 A
= 25°C, V
, t v 10 s(Note 1)
DS(on)
pk
qJA
qJA
qJC
, L = 1.0 mH, R
, t v 10 s
DD
(Note 1)
(Note 2)
to Minimize Conduction Losses
= 30 V, V
Parameter
Parameter
qJA
qJA
(T
GS
G
J
Steady
T
State
= 25°C unless otherwise stated)
A
= 25 W)
= 10 V,
= 25°C, t
T
T
T
T
T
T
T
T
T
p
A
A
A
A
A
A
C
C
C
= 10 ms
= 25°C
= 70°C
= 25°C
= 25°C
= 70°C
= 25°C
= 25°C
= 70°C
= 25°C
Symbol
Symbol
R
R
R
R
V
V
E
T
I
T
P
P
P
qJA
qJA
qJF
qJA
DSS
T
I
I
I
DM
I
stg
GS
AS
D
D
D
S
J
D
D
D
L
,
Value
−55 to
Value
22.5
153
1.49
0.82
10.2
24.5
±20
150
260
84
52
8.0
6.4
6.0
4.8
8.2
2.4
2.4
30
56
1
°C/W
Unit
Unit
mJ
°C
°C
W
W
W
V
V
A
A
A
A
A
†For information on tape and reel specifications,
NTMS4872NR2G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
CASE 751
STYLE 12
(BR)DSS
Device
30 V
(Note: Microdot may be in either location)
SO−8
1
ORDERING INFORMATION
4872N = Device Code
A
Y
WW
G
http://onsemi.com
G
16.5 mW @ 4.5 V
13.5 mW @ 10 V
R
= Assembly Location
= Year
= Work Week
= Pb−Free Package
DS(ON)
(Pb−Free)
Source
Source
Source
Package
SO−8
N−Channel
Gate
MARKING DIAGRAM/
Publication Order Number:
PIN ASSIGNMENT
D
MAX
1
S
Top View
2500/Tape & Reel
Shipping
NTMS4872N/D
I
D
10.2 A
8
MAX
Drain
Drain
Drain
Drain

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NTMS4872NR2G Summary of contents

Page 1

... Microdot may be in either location Device T 260 °C L NTMS4872NR2G †For information on tape and reel specifications, including part orientation and tape sizes, please Symbol Value Unit refer to our Tape and Reel Packaging Specification 84 °C/W R Brochure, BRD8011/D. qJA R 52 qJA R 22 ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage V Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES, CAPACITANCES ...

Page 3

DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure ...

Page 4

C iss 1200 900 600 C oss 300 C rss DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 10 100 ...

Page 5

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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