NTMS4872NR2G ON Semiconductor, NTMS4872NR2G Datasheet - Page 3

• Manufacturer Part Number: NTMS4872NR2G
• Description: MOSFET N-CH 30V 6A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMS4872NR2G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 10.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1700pF @ 15V
• Power - Max: 820mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.045
0.035
0.025
0.015
0.005
20
20
18
16
14
12
10
8
6
4
2
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
2
Figure 3. On−Resistance vs. Gate−to−Source
V
I
V
D
DS
Figure 1. On−Region Characteristics
GS
4.5 V
V
3.4 V
= 10.2 A
−25
3.6 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GS
Figure 5. On−Resistance Variation with
10V
5 V
3.8 V
= 10 V
1
, GATE−TO−SOURCE VOLTAGE (VOLTS)
4 V
T
4.2 V
J
, JUNCTION TEMPERATURE (°C)
4
0
2
25
Temperature
Voltage
6
50
3
3.2 V
75
TYPICAL PERFORMANCE CURVES
100
8
4
T
J
T
I
D
= 25°C
J
= 10 A
= 25°C
3.0 V
2.8 V
2.6 V
http://onsemi.com
2.4 V
125
5
10
150
3
100000
10000
0.016
0.014
0.012
0.008
0.006
1000
0.01
100
10
40
35
30
25
20
15
10
5
0
0
2
Figure 4. On−Resistance vs. Drain Current and
0
T
V
V
J
Figure 6. Drain−to−Source Leakage Current
DS
GS
= 25°C
4
V
V
≥ 10 V
DS
GS
= 0 V
Figure 2. Transfer Characteristics
5
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
6
1
I
D,
T
J
DRAIN CURRENT (AMPS)
8
= 25°C
10
T
Gate Voltage
J
10
= 100°C
2
vs. Voltage
V
V
T
T
GS
GS
J
J
= 150°C
= 100°C
12
15
= 4.5 V
= 10 V
14
3
T
J
20
= −55°C
16
18
4
25
20
30
22
5