NTMS4872NR2G ON Semiconductor, NTMS4872NR2G Datasheet - Page 4

• Manufacturer Part Number: NTMS4872NR2G
• Description: MOSFET N-CH 30V 6A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMS4872NR2G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 10.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1700pF @ 15V
• Power - Max: 820mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
0.01
1500
1200
100
0.1
100
900
600
300
10
10
1
0.1
1
0
1
0
V
SINGLE PULSE
T
Figure 11. Maximum Rated Forward Biased
V
I
V
C
D
C
GS
DD
GS
rss
= 10.2 A
= 25°C
V
= 20 V
C
= 15 V
= 10 V
DS
C
oss
Figure 9. Resistive Switching Time
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
iss
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
5
Figure 7. Capacitance Variation
Variation vs. Gate Resistance
R
R
THERMAL LIMIT
PACKAGE LIMIT
G
DS(on)
, GATE RESISTANCE (OHMS)
Safe Operating Area
1
10
LIMIT
10
15
10
TYPICAL PERFORMANCE CURVES
20
T
V
J
25
GS
10 ms
100 ms
10 ms
= 25°C
dc
1 ms
http://onsemi.com
t
= 0 V
t
t
d(off)
t
d(on)
r
f
100
100
30
4
10
25
20
15
10
5
4
3
2
1
0
8
6
4
2
0
5
0
0
25
0
V
T
Figure 10. Diode Forward Voltage vs. Current
Q
GS
J
Figure 12. Maximum Avalanche Energy vs.
Drain−To−Source Voltage vs. Total Charge
V
= 25°C
GS
T
2
SD
J
= 0 V
, STARTING JUNCTION TEMPERATURE (°C)
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.2
Figure 8. Gate−To−Source and
Starting Junction Temperature
4
50
Q
Q
G
GD
, TOTAL GATE CHARGE (nC)
6
0.4
8
75
QT
10
0.6
12
100
14
I
T
D
0.8
J
16
125
V
= 10.2 A
= 25°C
GS
I
D
18
= 7 A
1.0
150
20