RN142ZS12ATE61 Rohm Semiconductor, RN142ZS12ATE61 Datasheet
RN142ZS12ATE61
Manufacturer Part Number
RN142ZS12ATE61
Description
DIODE PIN HF SW 30V 50MA HMD12
Manufacturer
Rohm Semiconductor
Datasheet
1.RN142ZS12ATE61.pdf
(3 pages)
Specifications of RN142ZS12ATE61
Diode Type
PIN - 6 Independent
Voltage - Peak Reverse (max)
30V
Current - Max
50mA
Capacitance @ Vr, F
0.45pF @ 1V, 1MHz
Resistance @ If, F
1.5 Ohm @ 10mA, 100MHz
Package / Case
12-DFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power Dissipation (max)
-
Diodes
PIN Diode
RN142ZS12A
High frequency switching
1) Ultra small mold type HMD12
2) Low high-frequency forward
Silicon epitaxial planar
Forward voltage
Reverse current
Capacitance between terminals
Forward resistance
Reverse voltage (DC)
Forward current(DC)
Junction temperature
Storage temperature
Applications
Features
Construction
Absolute maximum ratings (Ta=25 C)
Electrical characteristic (Ta=25 C)
resistance (rF)
/ low capacitance (C
Parameter
Parameter
T
).
Symbol
V
Ct
Rf
Rf
I
R
F
Dimensions (Unit : mm)
Land size figure (Unit : mm)
Symbol
Taping specifications (Unit : mm)
Tstg
V
Tj
I
F
R
Min.
-
-
-
-
-
Typ.
-
-
-
-
-
-55 to +150
Limits
Max.
0.45
1.0
0.1
1.5
2.5
150
30
50
Unit
μA
pF
V
I
V
V
I
I
F
F
F
Structure
R
R
=10mA
=10mA,f=100MHz
=3mA,f=100MHz
=30V
=1.0V , f=1MHz
Unit
mA
V
RN142ZS12A
Conditions
1/2
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RN142ZS12ATE61 Summary of contents
Page 1
Diodes PIN Diode RN142ZS12A Applications High frequency switching Features 1) Ultra small mold type HMD12 2) Low high-frequency forward resistance (rF) / low capacitance ( Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25 C) Parameter Reverse voltage (DC) ...
Page 2
Diodes Electrical characteristic curves RN142ZS12A 2/2 ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...