PUMD3T/R NXP Semiconductors, PUMD3T/R Datasheet - Page 9
PUMD3T/R
Manufacturer Part Number
PUMD3T/R
Description
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R
Manufacturer
NXP Semiconductors
Type
NPN|PNPr
Datasheet
1.PUMD3165.pdf
(11 pages)
Specifications of PUMD3T/R
Package
6SOT-363
Configuration
Dual
Minimum Dc Current Gain
30@5mA@5V
Peak Dc Collector Current
100 mA
Maximum Collector Emitter Saturation Voltage
0.15@0.5mA@10mA V
Maximum Collector Emitter Voltage
50 V
Maximum Processing Temperature
260 °C
NXP Semiconductors
10. Revision history
Table 10.
PEMD3_PIMD3_PUMD3_10
Product data sheet
Document ID
PEMD3_PIMD3_ PUMD3_10 20091115
Modifications:
PEMD3_PIMD3_ PUMD3_9
PEMD3_PIMD3_ PUMD3_8
Revision history
Release date
20050518
20041206
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 9 “Package outline SOT363
Rev. 10 — 15 November 2009
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
Data sheet status
Product data sheet
Product data sheet
Product data sheet
PEMD3; PIMD3; PUMD3
(SC-88)”: updated
Change notice
-
-
-
Supersedes
PEMD3_PIMD3_ PUMD3_9
PEMD3_PIMD3_ PUMD3_8
PEMD3_PUMD3_7
© NXP B.V. 2009. All rights reserved.
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