ATF-54143-TR1G Avago Technologies US Inc., ATF-54143-TR1G Datasheet - Page 3

• Manufacturer Part Number: ATF-54143-TR1G
• Description: IC TRANS E-PHEMT 2GHZ SOT-343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-54143-TR1G

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 16.6dB
• Voltage - Rated: 5V
• Current Rating: 120mA
• Noise Figure: 0.5dB
• Current - Test: 60mA
• Voltage - Test: 3V
• Power - Output: 20.4dBm
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Power Dissipation: 725 mW
• Drain Source Voltage Vds: 5 V
• Gate-source Breakdown Voltage: - 5 V to 1 V
• Continuous Drain Current: 120 mA
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: - 5 V to 1 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 120mA
• Power Dissipation Pd: 725mW
• Noise Figure Typ: 0.5dB
• Rf Transistor Case: SOT-343
• No. Of Pins: 4
• Termination Type: SMD
• Rohs Compliant: Yes
• Filter Terminals: SMD
• Drain Current Idss Max: 5µA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1572-2

ATF-54143 Electrical Specifications
T
Symbol
Vgs
Vth
Idss
Gm
Igss
NF
Ga
OIP3
P1dB
Notes:
1. Measurements obtained using production test board described in Figure 5.
2. Typical values measured from a sample size of 450 parts from 9 wafers.
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit repre-
sents a trade-off between an optimal noise match and associated impedance matching circuit losses. Circuit losses have been de-embedded from
actual measurements.
3
Input
A
= 25°C, RF parameters measured in a test circuit for a typical device
Line Including
Transmission
(0.3 dB loss)
Gate Bias T
50 Ohm
Parameter and Test Condition
Operational Gate Voltage
Threshold Voltage
Saturated Drain Current
Transconductance
Gate Leakage Current
Noise Figure
Associated Gain
Output 3
Intercept Point
1dB Compressed
Output Power
rd
Order
[1]
[1]
[1]
[1]
Matching Circuit
Γ_mag = 0.30
Γ_ang = 150°
(0.3 dB loss)
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
Input
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 4 mA
Vds = 3V, Vgs = 0V
Vds = 3V, gm = ∆Idss/∆Vgs;
∆Vgs = 0.75 - 0.7 = 0.05V
Vgd = Vgs = -3V
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
DUT
Matching Circuit
Γ_mag = 0.035
Γ_ang = -71°
(0.4 dB loss)
Output
Units
V
V
µA
mmho
µA
dB
dB
dB
dB
dBm
dBm
dBm
dBm
Min.
0.4
0.18
—
230
—
—
—
15
—
33
—
—
—
Line Including
Transmission
(0.3 dB loss)
Drain Bias T
50 Ohm
Typ.
0.59
0.38
1
410
—
0.5
0.3
16.6
23.4
36.2
35.5
20.4
18.4
[2]
Output
Max.
0.75
0.52
5
560
200
0.9
—
18.5
—
—
—
—
—