ATF-54143-BLKG Avago Technologies US Inc., ATF-54143-BLKG Datasheet

IC PHEMT 2GHZ 3V 60MA SOT-343

ATF-54143-BLKG

Manufacturer Part Number
ATF-54143-BLKG
Description
IC PHEMT 2GHZ 3V 60MA SOT-343
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of ATF-54143-BLKG

Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Transistor Type
pHEMT FET
Frequency
2GHz
Gain
16.6dB
Voltage - Rated
5V
Current Rating
120mA
Noise Figure
0.5dB
Current - Test
60mA
Voltage - Test
3V
Power - Output
20.4dBm
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Power Dissipation
725 mW
Drain Source Voltage Vds
5 V
Gate-source Breakdown Voltage
- 5 V to 1 V
Continuous Drain Current
120 mA
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
- 5 V to 1 V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
120mA
Power Dissipation Pd
725mW
Noise Figure Typ
0.5dB
Rf Transistor Case
SOT-343
No. Of Pins
4
Frequency Max
6GHz
Rohs Compliant
Yes
Drain Current Idss Max
60mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
516-1868
ATF-54143-BLKG

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATF-54143-BLKG
Manufacturer:
AVAGO
Quantity:
30 000
Part Number:
ATF-54143-BLKG
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Description
Agilent Technologies’s ATF-54143
is a high dynamic range, low
noise, E-PHEMT housed in a
4-lead SC-70 (SOT-343) surface
mount plastic package.
The combination of high gain, high
linearity and low noise makes the
ATF-54143 ideal for cellular/PCS
base stations, MMDS, and other
systems in the 450 MHz to 6 GHz
frequency range.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
Agilent ATF-54143 Low Noise
Enhancement Mode
Pseudomorphic HEMT in a
Surface Mount Plastic Package
Data Sheet
Surface Mount Package
SOT-343
Pin Connections and
Package Marking
SOURCE
Note:
Top View. Package marking provides orientation
and identification
“4F” = Device Code
“x” = Date code character
identifies month of manufacture.
DRAIN
SOURCE
GATE
Features
• High linearity performance
• Enhancement Mode Technology
• Low noise figure
• Excellent uniformity in product
• 800 micron gate width
• Low cost surface mount small
• Tape-and-Reel packaging option
• Lead-free option available.
Specifications
2 GHz; 3V, 60 mA (Typ.)
• 36.2 dBm output 3
• 20.4 dBm output power at 1 dB
• 0.5 dB noise figure
• 16.6 dB associated gain
Applications
• Low noise amplifier for cellular/PCS
• LNA for WLAN, WLL/RLL and
• General purpose discrete E-PHEMT
Note:
1. Enhancement mode technology requires
specifications
plastic package SOT-343 (4 lead SC-
70)
available
gain compression
base stations
MMDS applications
for other ultra low noise applications
positive Vgs, thereby eliminating the need for
the negative gate voltage associated with
conventional depletion mode devices.
rd
order intercept
[1]

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ATF-54143-BLKG Summary of contents

Page 1

... ESD Machine Model (Class A) ESD Human Body Model (Class 1A) Refer to Agilent Application Note A004R: Electrostatic Discharge Damage and Control. Agilent ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Surface Mount Package ...

Page 2

... ATF-54143 Absolute Maximum Ratings Symbol Parameter [2] V Drain - Source Voltage DS [2] V Gate - Source Voltage GS [2] V Gate Drain Voltage GD [2] I Drain Current DS [3] P Total Power Dissipation diss P RF Input Power in max. I Gate Source Current GS T Channel Temperature CH T Storage Temperature STG [4] θ ...

Page 3

... ATF-54143 Electrical Specifications T = 25°C, RF parameters measured in a test circuit for a typical device A Symbol Parameter and Test Condition Vgs Operational Gate Voltage Vth Threshold Voltage Idss Saturated Drain Current Gm Transconductance Igss Gate Leakage Current [1] NF Noise Figure [1] Ga Associated Gain OIP3 ...

Page 4

... ATF-54143 Typical Performance Curves 0.7 0.6 0.5 0.4 3V 0 100 I (mA) ds Figure 6. Fmin vs. I and V Tuned for ds ds Max OIP3 and Fmin at 2 GHz 100 I (mA) ds Figure 9. Gain vs. I and V Tuned for ds ds Max OIP3 and Fmin at 900 MHz 100 ...

Page 5

... Tuned for Max OIP3 and Fmin at 3V, 60 mA. 1.4 1.2 1.0 0.8 0 FREQUENCY (GHz) [1] Figure 18. Fmin vs. Frequency and 3V. ATF-54143 Reflection Coefficient Parameters tuned for Maximum Output IP3 3V [1] Freq ΓOut_Mag. ΓOut_Ang. (GHz) (Mag) (Degrees) 0.9 0.017 115 2.0 0.026 -85 3.9 0.013 173 5.8 0.025 102 Note: 1 ...

Page 6

... ATF-54143 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.99 -17.6 27.99 0.5 0.83 -76.9 25.47 0.9 0.72 -114 22.52 1.0 0.70 -120.6 21.86 1.5 0.65 -146.5 19.09 1.9 0.63 -162.1 17.38 2.0 0.62 -165.6 17.00 2.5 0.61 178.5 15.33 3.0 ...

Page 7

... ATF-54143 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.99 -18.9 28.84 0.5 0.81 -80.8 26.04 0.9 0.71 -117.9 22.93 1.0 0.69 -124.4 22.24 1.5 0.64 -149.8 19.40 1.9 0.62 -164.9 17.66 2.0 0.62 -168.3 17.28 2.5 0.60 176.2 15.58 3.0 ...

Page 8

... ATF-54143 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.98 -20.4 28.32 0.5 0.80 -85.9 25.32 0.9 0.72 -123.4 22.10 1.0 0.70 -129.9 21.40 1.5 0.66 -154.6 18.55 1.9 0.65 -169.5 16.81 2.0 0.64 -172.8 16.42 2.5 0.64 172.1 14.69 3.0 ...

Page 9

... ATF-54143 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.99 -18.6 28.88 0.5 0.81 -80.2 26.11 0.9 0.71 -117.3 23.01 1.0 0.69 -123.8 22.33 1.5 0.64 -149.2 19.49 1.9 0.62 -164.5 17.75 2.0 0.61 -167.8 17.36 2.5 0.60 176.6 15.66 3.0 ...

Page 10

... Figure 1. Typical ATF-54143 LNA with Passive Biasing. Capacitors C2 and C5 provide a low impedance in-band RF bypass for the matching net- works. Resistors R3 and R4 provide a very important low frequency termination for the device. The resistive termination improves low frequency stability. Capacitors C3 and C6 provide the low frequency RF bypass for resistors R3 and R4 ...

Page 11

... Figure 2. Typical ATF-54143 LNA with Active Biasing. An active bias scheme is shown in Figure 2. R1 and R2 provide a constant voltage source at the base of a PNP transistor at Q2. The constant voltage at the base raised by 0.7 volts at the emitter. The constant emitter voltage plus the regulated V ...

Page 12

... Tau= Rgd=0.25 Ohm Tnom=16.85 Rd=1.0125 Ohm Idstc= Ucrit=-0.72 Rg=1.0 Ohm Vgexp=1.91 Rs=0.3375 Ohm Gamds=1e-4 Ld= Vtotc= Lg=0.18 nH Betatce= Ls= Rgs=0.25 Ohm Cds=0.27 pF Rc=250 Ohm ATF-54143 curtice ADS Model INSIDE Package VAR Var Egn VAR1 K=5 Z2=85 Z1= GATE C=0.13 pF Port TLINP TLINP G TL4 ...

Page 13

... V2 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil Figure 3. Adding Vias to the ATF-54143 Non-Linear Model for Comparison to Measured S and Noise Parameters. 13 eters and the simulated non- linear model, be sure to include the effect of the printed circuit board to get an accurate compari- son. This is shown schematically in Figure 3 ...

Page 14

Noise Parameter Applications Information F values at 2 GHz and higher min are based on measurements while the F below 2 GHz have mins been extrapolated. The F min values are based on a set of 16 noise figure measurements ...

Page 15

... Ordering Information Part Number No. of Devices ATF-54143-TR1 ATF-54143-TR2 ATF-54143-BLK ATF-54143-TR1G ATF-54143-TR2G ATF-54143-BLKG Note: For lead-free option, the part number will have the characger "G" at the end. Package Dimensions Outline 43 (SO%-343/SC70 4 lead) Symbol Min (mm) E 1.15 D 1.85 HE 1.80 A 0.80 A2 0. ...

Page 16

Recommended PCB Pad Layout for Agilent's SC70 4L/SOT-343 Products (dimensions in inches/mm) Device Orientation REEL CARRIER TAPE USER FEED DIRECTION COVER TAPE 16 TOP VIEW END VIEW ...

Page 17

Tape Dimensions and Product Orientation Description Cavity Length Width Depth Pitch Bottom Hole Diameter Perforlation Diameter Pitch Position Carrier Tape Width Thickness Cover Tape Width Thickness Distance Cavity to Perforation (Width Direction) Cavity to Perforation (Length Direction) For product information ...

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