CGH40006P Cree Inc, CGH40006P Datasheet

TRANS 8W RF GAN HEMT 440109 PKG

CGH40006P

Manufacturer Part Number
CGH40006P
Description
TRANS 8W RF GAN HEMT 440109 PKG
Manufacturer
Cree Inc
Datasheet

Specifications of CGH40006P

Mfg Application Notes
Thermal Performance Guide
Transistor Type
HEMT
Frequency
0Hz ~ 6GHz
Gain
13dB @ 2GHz
Voltage - Rated
84V
Current Rating
3.5A
Current - Test
100mA
Voltage - Test
28V
Power - Output
8W
Package / Case
440109
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CGH40006P
Manufacturer:
CREE
Quantity:
1 400
CGH40006P
6 W, RF Power GaN HEMT
Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGH40006P, operating from a 28 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs offer high efficiency, high gain and
wide bandwidth capabilities making the CGH40006P ideal for linear and
compressed amplifier circuits. The transistor is available in a
solder-down, pill package.
FEATURES
Up to 6 GHz Operation
13 dB Small Signal Gain at 2.0 GHz
11 dB Small Signal Gain at 6.0 GHz
8 W typical at P
65 % Efficiency at P
28 V Operation
IN
= 32 dBm
IN
= 32 dBm
Subject to change without notice.
www.cree.com/wireless
APPLICATIONS
2-Way Private Radio
Broadband Amplifiers
Cellular Infrastructure
Test Instrumentation
Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
1

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CGH40006P Summary of contents

Page 1

... The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006P ideal for linear and compressed amplifier circuits. The transistor is available in a solder-down, pill package. ...

Page 2

... Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Soldering Temperature 1 Thermal Resistance, Junction to Case 2 Case Operating Temperature 2 Note: Refer to the Application Note on soldering at 1 Measured for the CGH40006P Electrical Characteristics (T Characteristics Symbol DC Characteristics 1 Gate Threshold Voltage V GS(th) Gate Quiescent Voltage V ...

Page 3

... CGH40006P Rev 2.0 Preliminary Input & Output Return Losses vs Frequency the CGH40006P in the CGH40006P- -10 -12 -14 -16 -18 -20 0.0 1.0 5.0 6.0 7.0 Input & Output Return Losses vs Frequency the CGH40006P in the CGH40006P- -10 -12 -14 -16 -18 -20 5.0 6.0 7.0 0.0 1.0 S-parameter 28 V S11 S22 2 ...

Page 4

... Typical Performance Power Gain vs Output Power as a Function of Frequency of the CGH40006P in the CGH40006P- Drain Efficiency vs Output Power as a Function of Frequency of the CGH40006P in the CGH40006P-TB 70% 60% 50% 40% 30% 20% 10 Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...

Page 5

... Output Power vs Frequency of the CGH40006P in the CGH40006P- dBm, V Power (w) @ Pin 32 dBm 2.0 2.5 3.0 3.5 4.0 4.5 Frequency (GHz) Drain Efficiency vs Frequency of the CGH40006P in the CGH40006P- dBm EFF @ Pin 32 dBm 70% 60% 50% 40% 30% 20% 10% 0% 2.0 2.5 3.0 3.5 4.0 4.5 Frequency (GHz) Copyright © ...

Page 6

... Typical Performance Third Order Intermodulation Distortion vs Average Output Power as a Function of Frequency of the CGH40006P in the CGH40006P-TB 0.0 -10.0 -20.0 -30.0 -40.0 -50.0 -60 Simulated Maximum Available Gain and K Factor of the CGH40006P Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...

Page 7

... Typical Noise Performance Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40006P Electrostatic Discharge (ESD) Classifications Parameter Human Body Model Charge Device Model Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...

Page 8

... Source and Load Impedances Frequency (MHz) 1000 2000 3000 4000 5000 6000 Note 1. V Note 2. Optimized for power gain, P Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. CGH40006P Power Dissipation De-rating Curve Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). ...

Page 9

... CGH40006P-TB Demonstration Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH40006P Rev 2.0 Preliminary Bill of Materials Amplifier Circuit Description RES, AIN, 0505, 470 Ohms (≤5% tolerance) RES, AIN, 0505, 10 Ohms (≤ ...

Page 10

... CGH40006P-TB Demonstration CGH40006P-TB Demonstration Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH40006P Rev 2.0 Preliminary Schematic Amplifier Circuit Outline Amplifier Circuit Cree, Inc. ...

Page 11

... Typical Package S-Parameters for CGH40006P (Small Signal Frequency Mag S11 Ang S11 500 MHz 0.905 -96.56 600 MHz 0.889 -107.98 700 MHz 0.877 -117.55 800 MHz 0.867 -125.66 900 MHz 0.860 -132.61 1.0 GHz 0.854 -138.66 1.1 GHz 0.849 -143.98 1.2 GHz ...

Page 12

... Product Dimensions CGH40006P (Package Type — 440109) Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGH40006P Rev 2.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1 ...

Page 13

... Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 13 CGH40006P Rev 2.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1 ...

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