CGH40006P Cree Inc, CGH40006P Datasheet - Page 7

• Manufacturer Part Number: CGH40006P
• Description: TRANS 8W RF GAN HEMT 440109 PKG
• Manufacturer: Cree Inc

Specifications of CGH40006P

• Mfg Application Notes: Thermal Performance Guide
• Transistor Type: HEMT
• Frequency: 0Hz ~ 6GHz
• Gain: 13dB @ 2GHz
• Voltage - Rated: 84V
• Current Rating: 3.5A
• Current - Test: 100mA
• Voltage - Test: 28V
• Power - Output: 8W
• Package / Case: 440109
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

Typical Noise Performance
Electrostatic Discharge (ESD) Classifications
Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Parameter
Human Body Model
Charge Device Model
7
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40006P
CGH40006P Rev 2.0 Preliminary
Symbol
HBM
CDM
V
DD
= 28 V, I
DQ
= 100 mA
1A > 250 V
1 < 200 V
Class
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Test Methodology
USA Tel: [phone]
www.cree.com/wireless
Fax: [phone]
Durham, NC 27703
4600 Silicon Drive
Cree, Inc.