PD85025S-E STMicroelectronics, PD85025S-E Datasheet - Page 9

TRANS RF POWER LDMOST N-CH

PD85025S-E

Manufacturer Part Number
PD85025S-E
Description
TRANS RF POWER LDMOST N-CH
Manufacturer
STMicroelectronics
Datasheets

Specifications of PD85025S-E

Transistor Type
LDMOS
Frequency
870MHz
Gain
17.3dB
Voltage - Rated
40V
Current Rating
7A
Current - Test
300mA
Voltage - Test
13.6V
Power - Output
10W
Package / Case
PowerSO-10 Exposed Bottom Pad
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
7A
Drain Source Voltage (max)
40V
Output Power (max)
30W(Typ)
Power Gain (typ)@vds
17.3dB
Frequency (max)
1GHz
Package Type
Power SO-10RF
Pin Count
2
Input Capacitance (typ)@vds
55@12.5VpF
Output Capacitance (typ)@vds
40@12.5VpF
Reverse Capacitance (typ)
1.5@12.5VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
66%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
79000mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
497-8298
497-8298-5
497-8298
PD85025S-E

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD85025S-E
Manufacturer:
ST
Quantity:
20 000
PD85025-E, PD85025S-E
5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at:
www.st.com
Package mechanical data
9/15

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