PD55035S-E STMicroelectronics, PD55035S-E Datasheet - Page 10

• Manufacturer Part Number: PD55035S-E
• Description: TRANS RF N-CH FET LDMOST PWRSO10
• Manufacturer: STMicroelectronics

Specifications of PD55035S-E

• Transistor Type: LDMOS
• Frequency: 500MHz
• Gain: 16.9dB
• Voltage - Rated: 40V
• Current Rating: 7A
• Current - Test: 200mA
• Voltage - Test: 12.5V
• Power - Output: 35W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 7A
• Drain Source Voltage (max): 40V
• Output Power (max): 35W(Min)
• Power Gain (typ)@vds: 16.9dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Straight lead)
• Pin Count: 4
• Forward Transconductance (typ): 2.5(Min)S
• Input Capacitance (typ)@vds: 92@12.5VpF
• Output Capacitance (typ)@vds: 73@12.5VpF
• Reverse Capacitance (typ): 6.1@12.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 62%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 95000mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-5303-5

Typical performance 175 MHz
6
10/22
Figure 16. Output power vs input power
Figure 18. Efficiency vs output power
45
40
35
30
25
20
15
10
80
70
60
50
40
30
20
10
5
0
0
0
0
Typical performance 175 MHz
0.2
10
0.4
20
Pout (W )
Pin (W )
0.6
30
0.8
Vdd = 12.5 V
Idq = 200 m A
f = 175 MHz
Vdd = 12.5 V
Idq = 200 m A
f = 175 MHz
40
1
Doc ID 12331 Rev 2
1.2
50
Figure 17. Power gain vs output power
Figure 19. Input return loss vs output power
-10
-15
-20
-25
25
20
15
10
-5
5
0
0
0
0
10
10
20
20
Pout (W )
Pout (W )
PD55035-E, PD55035S-E
30
30
Vdd = 12.5 V
Idq = 200 m A
f = 175 MHz
Vdd = 12.5 V
Idq = 200 m A
f = 175 MHz
40
40
50
50