PD57006STR-E STMicroelectronics, PD57006STR-E Datasheet - Page 13

• Manufacturer Part Number: PD57006STR-E
• Description: TRANS RF N-CH FET POWERSO-10RF
• Manufacturer: STMicroelectronics

Specifications of PD57006STR-E

• Transistor Type: LDMOS
• Frequency: 945MHz
• Gain: 15dB
• Voltage - Rated: 65V
• Current Rating: 1A
• Current - Test: 70mA
• Voltage - Test: 28V
• Power - Output: 6W
• Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 1A
• Drain Source Voltage (max): 65V
• Output Power (max): 6W(Min)
• Power Gain (typ)@vds: 15dB
• Frequency (max): 945MHz
• Package Type: PowerSO-10RF (Straight lead)
• Pin Count: 4
• Forward Transconductance (typ): 0.58S
• Input Capacitance (typ)@vds: 27@28VpF
• Output Capacitance (typ)@vds: 14@28VpF
• Reverse Capacitance (typ): 0.9@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 50%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 20000mW
• Vswr (max): 10(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-10098-2; PD57006STR-E

PD57006-E
Figure 25. Test circuit photomaster
Figure 26. Test circuit
Table 9.
Z1
Z2
Z3
0.430” X 0.084”
0.220” X 0.155”
0.960” X 0.120”
MICROSTRIP
MICROSTRIP
MICROSTRIP
Transmission line dimensions
Doc ID 12611 Rev 3
Z4
Z5
Z6
1.273” X 0.565”
0.195” X 0.250”
0.555” X 0.171”
MICROSTRIP
MICROSTRIP
MICROSTRIP
Z7
Z8
Z8
0.778” X 0.150”
0.120” X 0.171”
1.200” X 0.084”
MICROSTRIP
MICROSTRIP
MICROSTRIP
Test circuit
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