ATF-35143-BLKG Avago Technologies US Inc., ATF-35143-BLKG Datasheet - Page 4

• Manufacturer Part Number: ATF-35143-BLKG
• Description: IC PHEMT 1.9GHZ 15MA LN SOT-343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-35143-BLKG

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 18dB
• Voltage - Rated: 5.5V
• Current Rating: 80mA
• Noise Figure: 0.4dB
• Current - Test: 15mA
• Voltage - Test: 2V
• Power - Output: 10dBm
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Power Dissipation: 300 mW
• Drain Source Voltage Vds: 5.5 V
• Gate-source Breakdown Voltage: - 5 V
• Continuous Drain Current: 80 mA
• Maximum Operating Temperature: + 160 C
• Maximum Drain Gate Voltage: - 5 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation Pd: 300mW
• Noise Figure Typ: 0.4dB
• Rf Transistor Case: SOT-343
• No. Of Pins: 4
• Drain Current Idss Max: 15mA
• Drain-source Breakdown Voltage: 5.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1864; ATF-35143-BLKG

ATF-35143 Typical Performance Curves
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 2 V 15 mA
2. P
4
Figure 6. OIP3 and P
Figure 8. NF and G
Figure 10. P
Tuned for NF @ 2V, 15 mA at 2 GHz.
30
25
20
15
10
20
19
18
17
16
15
25
20
15
10
-5
bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test
board requirements. Circuit losses have been de-embedded from actual measurements.
current may increase or decrease depending on frequency and dc bias point. At lower values of I
output approaches P
current source as is typically done with active biasing. As an example, at a V
approached.
5
0
5
0
1dB
0
0
0
measurements are performed with passive biasing. Quiescent drain current, I
OIP3
10
10
1dB
G
vs. Bias (Active Bias)
20
a
a
20
20
vs. Bias at 2 GHz.
1dB
I
I
DSQ
DSQ
I
DS
vs. Bias at 2 GHz.
30
30
40
(mA)
1dB
(mA)
(mA)
NF
. This results in higher P
40
40
[1]
[1]
P
60
1dB
[1,2]
50
50
2 V
3 V
4 V
2 V
3 V
4 V
2 V
3 V
4 V
60
60
80
2.5
2
1.5
1
0.5
0
1dB
and higher PAE (power added efficiency) when compared to a device that is driven by a constant
Figure 11. P
Tuned for NF @ 2V, 15 mA at 900 MHz.
Figure 7. OIP3 and P
Figure 9. NF and G
30
25
20
15
10
24
22
20
18
16
14
20
15
10
-5
5
5
0
0
0
0
OIP3
10
10
1dB
G
vs. Bias (Active Bias)
20
a
a
20
20
vs. Bias at 900 MHz.
1dB
DS
I
I
DSQ
DSQ
I
DS
vs. Bias at 900 MHz.
= 4 V and I
DSQ
30
30
40
(mA)
(mA)
(mA)
, is set with zero RF drive applied. As P
NF
40
40
P
1dB
DSQ
60
[1]
[1]
50
50
= 5 mA, I
[1,2]
2 V
3 V
4 V
2 V
3 V
4 V
2 V
3 V
4 V
DSQ
60
60
80
the device is running closer to class B as power
2.5
2
1.5
1
0.5
0
d
increases to 30 mA as a P
1dB
is approached, the drain
1dB
of +15 dBm is