PD57060S-E STMicroelectronics, PD57060S-E Datasheet - Page 8

• Manufacturer Part Number: PD57060S-E
• Description: TRANS RF N-CH FET LDMOST PWRSO10
• Manufacturer: STMicroelectronics

Specifications of PD57060S-E

• Transistor Type: LDMOS
• Frequency: 945MHz
• Gain: 14.3dB
• Voltage - Rated: 65V
• Current Rating: 7A
• Current - Test: 100mA
• Voltage - Test: 28V
• Power - Output: 60W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 7A
• Drain Source Voltage (max): 65V
• Output Power (max): 60W(Min)
• Power Gain (typ)@vds: 14.3dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Straight lead)
• Pin Count: 4
• Forward Transconductance (typ): 2.5(Min)S
• Input Capacitance (typ)@vds: 83@28VpF
• Output Capacitance (typ)@vds: 58@28VpF
• Reverse Capacitance (typ): 3@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 54%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 79000mW
• Vswr (max): 5(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-5310-5

Typical performance
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Figure 11. Drain efficiency vs bias current
Figure 13. Drain efficiency vs supply voltage
Nd (%)
70
60
50
40
30
20
10
Nd (%)
70
60
50
40
30
20
10
10
0
890MHz
960MHz
0.5
15
1
VDS (V)
IDQ (A)
20
925MHz
945MHz
1.5
925MHz
890MHz
25
Pin=32.8dBm
IDQ=100mA
960MHz
Pin=32.8dBm
VDS=28V
2
945MHz
Doc ID 11758 Rev 4
2.5
30
Figure 12. Output power vs supply voltage
Figure 14. Output power vs gate-source
Pout (W)
70
60
50
40
30
20
10
Pout (W)
80
70
60
50
40
30
20
10
10
0
voltage
1
15
2
VDS (V)
VGS (V)
890MHz
20
3
960MHz
925MHz
890MHz
925MHz
25
Pin=32.8dBm
IDQ=100mA
9455MHz
Pin=32.8dBm
VDS=28v
4
945MHz
PD57060-E
960MHz
30
5