NE3514S02-T1C-A CEL, NE3514S02-T1C-A Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/1/129/cel_sml.jpg)
NE3514S02-T1C-A
Manufacturer Part Number
NE3514S02-T1C-A
Description
HJ-FET NCH 10DB S02
Manufacturer
CEL
Specifications of NE3514S02-T1C-A
Transistor Type
HFET
Frequency
20GHz
Gain
10dB
Voltage - Rated
4V
Current Rating
70mA
Noise Figure
0.75dB
Current - Test
10mA
Voltage - Test
2V
Package / Case
S02
Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
55 mS
Gate-source Breakdown Voltage
- 3 V
Continuous Drain Current
10 mA
Power Dissipation
165 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NE3514S02-T1C-A
Manufacturer:
MURATA
Quantity:
460 000
RECOMMENDED OPERATING CONDITIONS (T
ELECTRICAL CHARACTERISTICS (T
2
Drain to Source Voltage
Drain Current
Input Power
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
Parameter
Parameter
Symbol
Symbol
V
I
V
I
GS (off)
NF
P
GSO
G
DSS
g
I
DS
D
m
in
a
A
V
V
V
V
V
Data Sheet PG10593EJ01V0DS
= +25°C, unless otherwise specified)
GS
DS
DS
DS
DS
MIN.
1
5
−
= −3 V
= 2 V, V
= 2 V, I
= 2 V, I
= 2 V, I
D
D
D
Test Conditions
TYP.
GS
A
= 100
= 10 mA
= 10 mA, f = 20 GHz
10
2
−
= +25°C)
= 0 V
µ
A
MAX.
15
3
0
dBm
Unit
mA
V
MIN.
−0.2
15
40
−
−
8
TYP.
−0.7
0.75
0.5
40
55
10
MAX.
−2.0
1.0
10
70
NE3514S02
−
−
Unit
mA
mS
µ
dB
dB
V
A