NE552R479A-T1-A CEL, NE552R479A-T1-A Datasheet - Page 7

• Manufacturer Part Number: NE552R479A-T1-A
• Description: MOSFET LD N-CHAN 3V 79A
• Manufacturer: CEL

Specifications of NE552R479A-T1-A

• Transistor Type: N-Channel
• Frequency: 2.45GHz
• Gain: 11dB
• Voltage - Rated: 15V
• Current Rating: 300mA
• Current - Test: 200mA
• Voltage - Test: 3V
• Power - Output: 26dBm
• Package / Case: 79A
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 15 V
• Gate-source Breakdown Voltage: 5 V
• Continuous Drain Current: 300 mA
• Power Dissipation: 10 W
• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 0.4 S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL APPLICATION CIRCUIT PERFORMANCE
26
34
32
30
28
24
22
20
18
8
f = 2.44 GHz
10
12
Input Power, P
OUTPUT POWER vs.
INPUT POWER
14
16
IN
18
(dBm)
20
3.6 V, 100mA
3.6 V, 300mA
5 V, 100mA
5 V, 300mA
8 V, 100mA
8 V, 300mA
22
24
(T
A
= 25°C)
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
6
Output Power, P
f = 2.44 GHz
8 10
OUTPUT POWER
12 14 16 18 20 22 24 26
IM3 vs.
OUT
(dBm), Each Tone
3.6 V, 100mA
3.6 V, 300mA
5 V, 100mA
5 V, 300mA
8 V, 100mA
8 V, 300mA