ATF-34143-BLKG Avago Technologies US Inc., ATF-34143-BLKG Datasheet - Page 3

• Manufacturer Part Number: ATF-34143-BLKG
• Description: IC PHEMT 1.9GHZ 60MA LN SOT-343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-34143-BLKG

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 17.5dB
• Voltage - Rated: 5.5V
• Current Rating: 145mA
• Noise Figure: 0.5dB
• Current - Test: 60mA
• Voltage - Test: 4V
• Power - Output: 20dBm
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Power Dissipation: 725 mW
• Drain Source Voltage Vds: 5.5 V
• Gate-source Breakdown Voltage: - 5 V
• Continuous Drain Current: 145 mA
• Maximum Operating Temperature: + 160 C
• Maximum Drain Gate Voltage: - 5 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation Pd: 725mW
• Noise Figure Typ: 0.5dB
• Rf Transistor Case: SOT-343
• No. Of Pins: 4
• Frequency Max: 6GHz
• Filter Terminals: SMD
• Frequency Min: 450MHz
• Rohs Compliant: Yes
• Drain Current Idss Max: 60mA
• Drain-source Breakdown Voltage: 5.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1863; ATF-34143-BLKG

ATF-34143 Electrical Specifications
T
Notes:
1. Guaranteed at wafer probe level
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. Using production test board.
Input
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit represents a trade-off
between an optimal noise match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measurements.
3
A
= 25°C, RF parameters measured in a test circuit for a typical device
Symbol
I
OIP3
g
V
dss
I
P
GDO
I
NF
G
m
P
gss
1dB
I
d
[1]
[1]
a
[1]
Line Including
Transmission
(0.5 dB loss)
Gate Bias T
50 Ohm
Saturated Drain Current
Pinchoff Voltage
Quiescent Bias Current
Transconductance
Gate to Drain Leakage Current
Gate Leakage Current
Noise Figure
Associated Gain
Output 3
Intercept Point
1 dB Compressed
Intercept Point
Parameters and Test Conditions
rd
Order
[3]
[3]
Matching Circuit
Γ_mag = 0.30
(0.4 dB loss)
Γ_ang = 56°
Input
+5 dBm P
+5 dBm P
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
out
out
/Tone
/Tone
DUT
V
DS
= 1.5 V, I
V
V
V
V
DS
V
V
V
V
V
V
V
V
V
V
GS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
V
= 1.5 V, g
DS
= -0.34 V, V
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 1.5 V, V
V
DS
GD
Line Including
Transmission
= 10% of I
(0.5 dB loss)
Drain Bias T
= V
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
m
50 Ohm
V
= 60 mA
= 30 mA
= 60 mA
= 60 mA
= 30 mA
= 60 mA
= 60 mA
= 30 mA
= 60 mA
= 60 mA
= 30 mA
= 60 mA
= I
GS
GD
GS
DS
dss
= -4 V
= 0 V
= 4 V
= 5 V
/V
dss
P
mmho
Units
dBm
dBm
dBm
dBm
mA
mA
µA
µA
dB
dB
dB
dB
V
Output
-0.65
Min.
180
90
—
—
16
29
Typ.
17.5
21.5
31.5
18.5
-0.5
118
230
0.5
0.5
0.4
60
30
17
30
31
20
19
[2]
-0.35
Max.
145
500
300
0.8
19
—
—