ATF-34143-BLKG Avago Technologies US Inc., ATF-34143-BLKG Datasheet - Page 6

• Manufacturer Part Number: ATF-34143-BLKG
• Description: IC PHEMT 1.9GHZ 60MA LN SOT-343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-34143-BLKG

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 17.5dB
• Voltage - Rated: 5.5V
• Current Rating: 145mA
• Noise Figure: 0.5dB
• Current - Test: 60mA
• Voltage - Test: 4V
• Power - Output: 20dBm
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Power Dissipation: 725 mW
• Drain Source Voltage Vds: 5.5 V
• Gate-source Breakdown Voltage: - 5 V
• Continuous Drain Current: 145 mA
• Maximum Operating Temperature: + 160 C
• Maximum Drain Gate Voltage: - 5 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation Pd: 725mW
• Noise Figure Typ: 0.5dB
• Rf Transistor Case: SOT-343
• No. Of Pins: 4
• Frequency Max: 6GHz
• Filter Terminals: SMD
• Frequency Min: 450MHz
• Rohs Compliant: Yes
• Drain Current Idss Max: 60mA
• Drain-source Breakdown Voltage: 5.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1863; ATF-34143-BLKG

ATF-34143 Power Parameters tuned for Power, V
ATF-34143 Power Parameters tuned for Power, V
Notes:
1. P
2. PAE(%) = ((Pout – Pin)/Pdc) x 100
3. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.
6
Figure 20. Swept Power Tuned for
Power at 2 GHz, V
Freq
(GHz)
0.9
1.5
1.8
2
4
6
Freq
(GHz)
0.9
1.5
1.8
2
4
6
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
B as power output approaches P
current source as is typically done with active biasing. As an example, at a V
is approached.
1dB
-10
80
50
40
30
20
10
0
-30
measurements are performed with passive biasing. Quicescent drain current, I
P
(dBm)
20.9
21.7
21.3
22.0
22.7
23.3
P
(dBm)
18.2
18.7
18.8
18.8
20.2
21.2
1dB
1dB
-20
DS
= 4 V, I
-10
P
in
I
(mA)
114
115
111
106
110
115
I
(mA)
75
58
57
59
66
79
d
d
(dBm)
DSQ
0
= 120 mA.
1dB
10
G
(dB)
25.7
21.9
20.5
19.5
12.7
9.2
G
(dB)
27.5
24.5
23.0
22.2
13.9
9.9
. This results in higher PAE (power added efficiency) when compared to a device that is driven by a constant
1dB
1dB
P
Gain
PAE
out
20
PAE
(%)
27
32
30
37
40
41
PAE
(%)
22
32
33
32
38
37
1dB
1dB
Figure 21. Swept Power Tuned for
Power at 2 GHz, V
-20
DS
DS
80
60
40
20
0
-30
= 4 V, I
= 4 V, I
P
(dBm)
22.8
23.1
23.0
23.7
23.6
24.2
P
(dBm)
20.5
20.8
21.1
21.9
22.0
23.5
3dBm
3dBm
-20
DSQ
DSQ
DS
= 120 mA
= 60 mA
= 4 V, I
-10
P
DS
in
I
(mA)
108
95
105
115
111
121
I
(mA)
78
59
71
81
77
102
(dBm)
= 4 V and I
d
d
DSQ
0
DSQ
= 60 mA.
, is set with zero RF drive applied. As P
DSQ
10
PAE
(%)
44
53
47
50
47
44
PAE
(%)
36
51
45
47
48
46
P
Gain
PAE
= 10 mA, I
out
3dB
3dB
20
d
increases to 62 mA as a P
Gamma
Out_mag
(Mag)
0.34
0.31
0.30
0.28
0.26
0.24
Gamma
Out_mag
(Mag)
0.48
0.45
0.42
0.40
0.25
0.18
DSQ
the device is running closer to class
Gamma
Out_ang
(Degrees)
136
152
164
171
-135
-66
Gamma
Out_ang
(Degrees)
102
117
126
131
-162
-77
1dB
1dB
is approached,
of +19 dBm