BLF6G38LS-50,112 NXP Semiconductors, BLF6G38LS-50,112 Datasheet - Page 4

• Manufacturer Part Number: BLF6G38LS-50,112
• Description: IC WIMAX 3.8GHZ SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38LS-50,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 3.4GHz ~ 3.6GHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 16.5A
• Current - Test: 450mA
• Voltage - Test: 28V
• Power - Output: 9W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 16.5 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061174112; BLF6G38LS-50; BLF6G38LS-50

NXP Semiconductors
BLF6G38-50_BLF6G38LS-50
Product data sheet
Fig 1.
EVM
(%)
5
4
3
2
1
0
0
V
typical values
EVM as a function of average load power;
DS
= 28 V; I
7.2.1 WiMAX signal description
7.2.2 Graphs
7.2 NXP WiMAX signal
Dq
4
= 450 mA; f = 3500 MHz.
Frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame;
frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = T
FFT = 1024; zone type = PUSC; δ = 97.7 %; number of symbols = 46;
number of subchannels = 30; PAR = 9.5 dB.
Preamble: 1 symbol × 30 subchannels; P
Table 8.
Frame contents
Zone 0
Zone 0
Zone 0
FCH
data
data
Frame structure
8
P
L(AV)
2 symbols × 4 subchannels
2 symbols × 26 subchannels
44 symbols × 30 subchannels
All information provided in this document is subject to legal disclaimers.
001aah395
(W)
12
Rev. 02 — 1 June 2010
BLF6G38-50; BLF6G38LS-50
Fig 2.
(dB)
G
p
15
13
11
L
9
7
5
= P
0
V
Power gain and drain efficiency as functions
of average load power; typical values
DS
L(nom)
= 28 V; I
Modulation technique
QPSK1/2
64QAM3/4
64QAM3/4
G
η
+ 3.86 dB.
D
p
Dq
WiMAX power LDMOS transistor
4
= 450 mA; f = 3500 MHz.
g
8
/ T
P
L(AV)
© NXP B.V. 2010. All rights reserved.
b
= 1 / 8;
001aah396
(W)
Data length
3 bit
692 bit
10000 bit
12
30
24
18
12
6
0
(%)
η
D
4 of 13