BLF6G38LS-50,112 NXP Semiconductors, BLF6G38LS-50,112 Datasheet - Page 5
![IC WIMAX 3.8GHZ SOT502B](/photos/5/63/56376/568-2-ldmost_sot-502b_sml.jpg)
BLF6G38LS-50,112
Manufacturer Part Number
BLF6G38LS-50,112
Description
IC WIMAX 3.8GHZ SOT502B
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G38-50135.pdf
(13 pages)
Specifications of BLF6G38LS-50,112
Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
3.4GHz ~ 3.6GHz
Gain
14dB
Voltage - Rated
65V
Current Rating
16.5A
Current - Test
450mA
Voltage - Test
28V
Power - Output
9W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.29 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
16.5 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061174112
BLF6G38LS-50
BLF6G38LS-50
BLF6G38LS-50
BLF6G38LS-50
NXP Semiconductors
BLF6G38-50_BLF6G38LS-50
Product data sheet
Fig 4.
(dB)
G
p
16
15
14
13
12
11
10
3400
V
PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz.
Power gain and drain efficiency as functions
of frequency; typical values
DS
= 28 V; I
7.3.1 Graphs
η
G
7.3 Single carrier N-CDMA broadband performance at 9 W average
D
p
3450
Dq
= 450 mA; Single Carrier N-CDMA;
Fig 3.
3500
(1)
(2)
(3)
Adjacent channel power ratio as a function of average load power; typical values
V
f = 10 MHz
f = 20 MHz
f = 30 MHz
DS
3550
= 28 V; I
All information provided in this document is subject to legal disclaimers.
f (MHz)
001aah398
Dq
ACPR
(dBc)
3600
= 450 mA; f = 3500 MHz.
−20
−30
−40
−50
−60
−70
Rev. 02 — 1 June 2010
26
25
24
23
22
21
20
(%)
η
0
D
BLF6G38-50; BLF6G38LS-50
Fig 5.
ACPR
(dBc)
4
(1) Low frequency component
(2) High frequency component
−40
−50
−60
−70
3400
V
PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz.
Adjacent channel power ratio as a function of
frequency; typical values
DS
= 28 V; I
(1)
(2)
(3)
8
3450
P
Dq
L(AV)
WiMAX power LDMOS transistor
= 450 mA; Single Carrier N-CDMA;
001aah397
(W)
(1)
(2)
(1)
(2)
(1)
(2)
3500
12
3550
© NXP B.V. 2010. All rights reserved.
ACPR
ACPR
ACPR
f (MHz)
001aah399
885k
1500k
1980k
3600
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