PD55003L-E STMicroelectronics, PD55003L-E Datasheet - Page 6
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PD55003L-E
Manufacturer Part Number
PD55003L-E
Description
TRANSISTOR RF 5X5 POWERFLAT
Manufacturer
STMicroelectronics
Specifications of PD55003L-E
Transistor Type
LDMOS
Frequency
500MHz
Gain
19dB
Voltage - Rated
40V
Current Rating
2.5A
Current - Test
50mA
Voltage - Test
12.5V
Power - Output
3W
Package / Case
PowerFLAT™ (5 x 5)
Drain Source Voltage Vds
40V
Continuous Drain Current Id
2.5A
Rf Transistor Case
PowerFLAT
No. Of Pins
8
Svhc
No SVHC (15-Dec-2010)
External Depth
1mm
Rohs Compliant
Yes
Configuration
Single Quad Drain Quad Gate
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
2.5 A
Power Dissipation
14 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
40V
Output Power (max)
3W
Power Gain (typ)@vds
19dB
Frequency (max)
1GHz
Package Type
Power Flat
Pin Count
14
Forward Transconductance (typ)
1S
Input Capacitance (typ)@vds
34@12.5VpF
Output Capacitance (typ)@vds
23@12.5VpF
Reverse Capacitance (typ)
1.8@12.5VpF
Operating Temp Range
-65C to 150C
Drain Efficiency (typ)
52%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
14000mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Details
Other names
497-6472-2
PD55003L-E
PD55003L-E
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PD55003L-E
Manufacturer:
INFINEON
Quantity:
120
Part Number:
PD55003L-E
Manufacturer:
ST
Quantity:
20 000
2.1
6/19
Figure 2.
Figure 4.
Figure 6.
1 00 0
-10
-15
-20
-25
-30
10 0
24
22
20
18
16
14
12
10
1 0
-5
0
1
0.0
0.0
0
Idq = 50 mA
Capacitance Vs supply Voltage
Power Gain Vs Output Power
Input Return Loss Vs Output Power Figure 7.
Typical performances
Idq = 20 mA
0.5
0.5
Idq = 50 mA
Idq = 70 mA
2
Idq = 30 mA
1.0
1.0
C o s s
C rs s
4
Idq = 70mA
1.5
1.5
C is s
6
2.0
2.0
Pout (W)
Pout (W)
Vd s (V)
2.5
2.5
8
3.0
3.0
10
3.5
3.5
Vds = 12.5 V
f = 500 MHz
Vds = 12.5 V
f = 500 MHz
12
4.0
4.0
f = 1 M H z
14
4.5
4.5
5.0
5.0
16
Rev1
Figure 3.
Figure 5.
7
6
5
4
3
2
1
0
70
60
50
40
30
20
10
0
0
6
5
4
3
2
1
0
0.0
0
50
Output Power Vs Input Power
Efficiency Vs Output Power
Output Power Vs Bias Current
0.5
Idq = 50 mA
100
1.0
25
150
1.5
200
Idq = 70 mA
2.0
Idq (mA)
Idq = 70 mA
50
Pout (W )
Pin (mW)
250
2.5
300
3.0
Idq = 50 mA
75
350
3.5
Vdd = 12.5 V
Vds = 12.5 V
f = 500 MHz
Pin = 20 dBm
f = 500 MHz
Vds = 12.5 V
f = 500 MHz
400
100
4.0
450
4.5
500
125
5.0