PD85006L-E STMicroelectronics, PD85006L-E Datasheet - Page 8
![TRANS RF POWER LDMOST](/photos/5/64/56489/pd85006l-e_sml.jpg)
PD85006L-E
Manufacturer Part Number
PD85006L-E
Description
TRANS RF POWER LDMOST
Manufacturer
STMicroelectronics
Datasheet
1.PD85006L-E.pdf
(17 pages)
Specifications of PD85006L-E
Transistor Type
LDMOS
Frequency
870MHz
Gain
17dB
Voltage - Rated
40V
Current Rating
2A
Current - Test
200mA
Voltage - Test
13.6V
Power - Output
5W
Package / Case
PowerFLAT™ (5 x 5)
Configuration
Quad Common Source
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
- 0.5 V, + 15 V
Continuous Drain Current
2 A
Power Dissipation
20.8 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Details
Other names
497-8292
497-8292-2
497-8292
497-8292-2
497-8292
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PD85006L-E
Manufacturer:
DIODES
Quantity:
4 000
Part Number:
PD85006L-E
Manufacturer:
ST
Quantity:
20 000
RF curves
8/17
Figure 12. Harmonics vs frequency
-10
-20
-30
-40
-50
-60
-70
-80
0
860
880
13.6 V / 200 mA
H2
900
Frequency (MHz)
H3
920
940
960
PD85006L-E