PD85015S-E STMicroelectronics, PD85015S-E Datasheet - Page 4
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PD85015S-E
Manufacturer Part Number
PD85015S-E
Description
IC RF PWR TRANSISTOR PWRSO-10RF
Manufacturer
STMicroelectronics
Datasheet
1.PD85015TR-E.pdf
(13 pages)
Specifications of PD85015S-E
Transistor Type
LDMOS
Frequency
870MHz
Gain
16dB
Voltage - Rated
40V
Current Rating
5A
Current - Test
150mA
Voltage - Test
13.6V
Power - Output
15W
Package / Case
PowerSO-10 Exposed Bottom Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD85015S-E
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
2
2.1
2.2
2.3
4/13
Electrical characteristics
Static
Table 4.
Dynamic
Table 5.
ESD protection characteristics
Table 6.
mismatch
Symbol
Symbol
V
V
C
C
P3dB
Load
DS(ON)
I
C
I
GS(Q)
DSS
GSS
G
h
OSS
RSS
ISS
D
P
T
CASE
V
V
V
V
All phase angles
V
V
V
V
V
V
V
Static
Dynamic
ESD protection characteristics
DD
DD
DD
DD
GS
GS
DS
GS
GS
GS
GS
= 13.6 V, I
= 13.6 V, I
= 13.6 V, I
= 1 7 V, I
= 0V
= 5 V
= 10 V
= 10 V
= 0V
= 0V
= 0V
= +25
o
C
DQ
DQ
DQ
DQ
= 300 mA, P
= 150 mA
= 150 mA, P
= 150 mA, P
Test conditions
Test conditions
Doc ID 14466 Rev 2
V
V
V
V
V
Human body model
I
DS
DS
I
DS
DS
DS
Test conditions
D
D
Machine model
= 1 A
= 150 mA
= 25 V
= 0 V
= 12.5 V
= 12.5 V
= 12.5 V
OUT
OUT
OUT
= 25 W, f = 870 MHz
= 15 W, f = 870 MHz
= P3dB, f = 870 MHz
f = 870 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
STAP85015-E STAP85015S-E
20:1
Min
Min
15
16
60
-
Typ
0.34
Typ
20
70
3.4
1.2
45
36
Max
Max
-
1
1
Class
M3
VSWR
2
Unit
Unit
dB
µA
µA
W
pF
pF
pF
%
V
V