PD85035STR-E STMicroelectronics, PD85035STR-E Datasheet - Page 5

• Manufacturer Part Number: PD85035STR-E
• Description: TRANS RF N-CH FET POWERSO-10RF
• Manufacturer: STMicroelectronics

Specifications of PD85035STR-E

• Transistor Type: LDMOS
• Frequency: 870MHz
• Gain: 17dB
• Voltage - Rated: 40V
• Current Rating: 8A
• Current - Test: 350mA
• Voltage - Test: 13.6V
• Power - Output: 15W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 8A
• Drain Source Voltage (max): 40V
• Output Power (max): 40W(Typ)
• Power Gain (typ)@vds: 17dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Straight lead)
• Pin Count: 4
• Input Capacitance (typ)@vds: 76@12.5VpF
• Output Capacitance (typ)@vds: 45@12.5VpF
• Reverse Capacitance (typ): 1.4@12.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 72%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 95000mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

PD85035-E, PD85035S-E
3
Impedance
Figure 2.
Table 8.
Frequency (MHz)
870 MHz
Current conventions
Impedance data
0.57 +j 0.73
Z
IN
(Ω)
1.73 -j 0.15
Z
DL
(Ω)
Impedance
5/15