MW6S010NR1 Freescale Semiconductor, MW6S010NR1 Datasheet - Page 10

• Manufacturer Part Number: MW6S010NR1
• Description: MOSFET RF N-CH 28V 10W TO-270-2
• Manufacturer: Freescale Semiconductor

Specifications of MW6S010NR1

• Transistor Type: N-Channel
• Frequency: 960MHz
• Gain: 18dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 125mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 68 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 125 mA
• Power Dissipation: 10 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 68V
• Power Gain (typ)@vds: 20dB
• Frequency (max): 1.5GHz
• Package Type: TO-270
• Pin Count: 3
• Output Capacitance (typ)@vds: 10@28VpF
• Reverse Capacitance (typ): 0.32@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 33%
• Mounting: Surface Mount
• Mode Of Operation: 2-Tone
• Number Of Elements: 1
• Power Dissipation (max): 61400mW
• Vswr (max): 10
• Screening Level: Military
• Drain Source Voltage Vds: 68V
• Rf Transistor Case: TO-270
• Msl: MSL 3 - 168 Hours
• Filter Terminals: SMD
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Operating Frequency Max: 900MHz
• Gate-source Voltage: 12V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MW6S010NR1; MW6S010NR1TR

R2
R1
C1
R5
T1
C15
B1
R3
B2
T2
R4
C14
C2
C3
C4
C13
C5
C12
L1
C10
C9
R6
C7
C8
C11
C6
MW6S010N 450 MHz
Figure 15. MW6S010NR1(GNR1) Test Circuit Component Layout — 450 MHz
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
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