MW6S010NR1 Freescale Semiconductor, MW6S010NR1 Datasheet - Page 12

• Manufacturer Part Number: MW6S010NR1
• Description: MOSFET RF N-CH 28V 10W TO-270-2
• Manufacturer: Freescale Semiconductor

Specifications of MW6S010NR1

• Transistor Type: N-Channel
• Frequency: 960MHz
• Gain: 18dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 125mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 68 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 125 mA
• Power Dissipation: 10 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 68V
• Power Gain (typ)@vds: 20dB
• Frequency (max): 1.5GHz
• Package Type: TO-270
• Pin Count: 3
• Output Capacitance (typ)@vds: 10@28VpF
• Reverse Capacitance (typ): 0.32@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 33%
• Mounting: Surface Mount
• Mode Of Operation: 2-Tone
• Number Of Elements: 1
• Power Dissipation (max): 61400mW
• Vswr (max): 10
• Screening Level: Military
• Drain Source Voltage Vds: 68V
• Rf Transistor Case: TO-270
• Msl: MSL 3 - 168 Hours
• Filter Terminals: SMD
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Operating Frequency Max: 900MHz
• Gate-source Voltage: 12V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MW6S010NR1; MW6S010NR1TR

MW6S010NR1 MW6S010GNR1
12
Figure 20. Series Equivalent Source and Load Impedance — 450 MHz
f = 400 MHz
Z
Z
Z
source
load
Input
Matching
Network
source
MHz
400
420
440
460
480
500
f
Z
f = 400 MHz
V
o
DD
= 25 Ω
= Test circuit impedance as measured from
= Test circuit impedance as measured
= 28 Vdc, I
gate to ground.
from drain to ground.
Z
10.7 + j12.6
11.5 + j13.9
10.6 + j9.5
source
9.0 + j3.8
8.8 + j5.4
9.6 + j6.6
Z
DQ
source
Ω
f = 500 MHz
= 150 mA, P
Device
Under
Test
f = 500 MHz
Z
load
out
= 10 W PEP
Z
16.9 + j12.7
16.4 + j11.1
load
15.0 + j1.4
14.3 + j3.3
15.0 + j4.7
16.3 + j7.3
Z
load
Ω
Output
Matching
Network
Freescale Semiconductor
RF Device Data