MW6S010NR1 Freescale Semiconductor, MW6S010NR1 Datasheet - Page 19

• Manufacturer Part Number: MW6S010NR1
• Description: MOSFET RF N-CH 28V 10W TO-270-2
• Manufacturer: Freescale Semiconductor

Specifications of MW6S010NR1

• Transistor Type: N-Channel
• Frequency: 960MHz
• Gain: 18dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 125mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 68 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 125 mA
• Power Dissipation: 10 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 68V
• Power Gain (typ)@vds: 20dB
• Frequency (max): 1.5GHz
• Package Type: TO-270
• Pin Count: 3
• Output Capacitance (typ)@vds: 10@28VpF
• Reverse Capacitance (typ): 0.32@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 33%
• Mounting: Surface Mount
• Mode Of Operation: 2-Tone
• Number Of Elements: 1
• Power Dissipation (max): 61400mW
• Vswr (max): 10
• Screening Level: Military
• Drain Source Voltage Vds: 68V
• Rf Transistor Case: TO-270
• Msl: MSL 3 - 168 Hours
• Filter Terminals: SMD
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Operating Frequency Max: 900MHz
• Gate-source Voltage: 12V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MW6S010NR1; MW6S010NR1TR

RF Device Data
Freescale Semiconductor
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1949: Mounting Method for the MHVIC910HR2 (PFP - 16) and Similar Surface Mount Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
4
5
June 2009
Dec. 2008
Date
• Changed Storage Temperature Range in Max Ratings table from - 65 to +175 to - 65 to +150 for
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
• Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
• Corrected V
• Corrected C
• Updated Part Numbers in Tables 6, 7, Component Designations and Values, to RoHS compliant part
• Removed lower voltage tests from Fig. 10, Power Gain versus Output Power, due to fixed tuned fixture
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps
• Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 13 - 15. Corrected cross hatch pattern in
• Replaced Case Outline 1265A - 02 with 1265A - 03, Issue C, p. 1, 16 - 18. Corrected cross hatch pattern and
• Added Product Documentation and Revision History, p. 19
• Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
• Added AN3789, Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages to
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 19
standardization across products, p. 1
provided in Thermal Characteristics table), p. 1
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C in
Capable Plastic Package bullet, p. 1
Test”, On Characteristics table, p. 2
Dynamic Characteristics table, p. 2
numbers, p. 3, 9
limitations, p. 6
operating characteristics and location of MTTF calculator for device, p. 7
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC
Standard Package Number.
its dimensions (D2 and E2) on source contact (D2 changed from Min - Max .290 - .320 to .290 Min; E3
changed from Min - Max .150 - .180 to .150 Min). Added pin numbers. Corrected mm dimension L for
gull - wing foot from 4.90 - 5.06 Min - Max to 0.46 - 0.61 Min - Max. Added JEDEC Standard Package Number.
process as described in Product and Process Change Notification number, PCN13516, p. 2
Product Documentation, Application Notes, p. 19
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
DS
iss
to V
test condition to indicate AC stimulus on the V
DD
in the RF test condition voltage callout for V
REVISION HISTORY
Description
GS
connection versus the V
GS(Q)
and added “Measured in Functional
MW6S010NR1 MW6S010GNR1
DS
2
connection,
and listed
19