MRF6S20010NR1 Freescale Semiconductor, MRF6S20010NR1 Datasheet
MRF6S20010NR1
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MRF6S20010NR1 Summary of contents
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... Operation DD Document Number: MRF6S20010N Rev. 3, 6/2009 MRF6S20010NR1 MRF6S20010GNR1 1600- 2200 MHz GSM, GSM EDGE SINGLE N - CDMA CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1265 - 09, STYLE 270 - 2 PLASTIC MRF6S20010NR1 CASE 1265A - 03, STYLE 270 - 2 GULL PLASTIC MRF6S20010GNR1 Symbol Value V - 0.5, +68 DSS V - 0.5, + +150 stg ...
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... MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Part internally matched on input. 4. Measurement made with device in straight lead configuration before any lead forming operation is applied. MRF6S20010NR1 MRF6S20010GNR1 2 Rating 3 = 25°C unless otherwise noted) ...
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... Avg., DQ out — 15.5 — dB — 16 — % — 0.3 — dB — — dBc = 28 Vdc 130 mA Avg out — 16 — dB — 33 — % — 0.3 — dB — 1.3 — % rms — — dBc — — dBc MRF6S20010NR1 MRF6S20010GNR1 3 ...
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... Microstrip Z8 0.0905″ x 0.330″ Microstrip Z9 0.050″ x 0.980″ Microstrip Figure 1. MRF6S20010NR1(GNR1) Test Circuit Schematic — 2110 - 2170 MHz Table 6. MRF6S20010NR1(GNR1) Test Circuit Component Designations and Values — 2110 - 2170 MHz Part C1 100 nF Chip Capacitor C2, C6 4.7 pF Chip Capacitors C3, C7 ...
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... R2 C1 C11 Figure 2. MRF6S20010NR1(GNR1) Test Circuit Component Layout — 2110 - 2170 MHz RF Device Data Freescale Semiconductor R3 MRF6S20010N, Rev. 2 MRF6S20010NR1 MRF6S20010GNR1 C10 C8 5 ...
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... MHz 2170.1 MHz −20 Two−Tone Measurements −30 −40 −50 5th Order −60 −70 0 OUTPUT POWER (WATTS) PEP out Figure 6. Intermodulation Distortion Products versus Output Power MRF6S20010NR1 MRF6S20010GNR1 6 — 2110 - 2170 MHz η D IRL Vdc (PEP) DD out I = 130 mA, 100 kHz Tone Spacing DQ IMD G ...
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... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product −30_C 25_C 85_C η OUTPUT POWER (WATTS) CW out versus CW Output Power S21 S11 1200 1600 2000 2400 2800 f, FREQUENCY (MHz) 230 250 = 36%. D MRF6S20010NR1 MRF6S20010GNR1 −3 −6 −9 −12 −15 3200 7 ...
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... W−CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel 35 Bandwidth, PAR = 8 0.01% Probability (CCDF 0.1 Figure 14 Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power MRF6S20010NR1 MRF6S20010GNR1 8 — 2110 - 2170 MHz = 28 Vdc (Avg.), I = 130 mA out DQ 2080 2100 2120 2140 2160 2180 ...
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... Freescale Semiconductor W - CDMA TEST SIGNAL +20 +30 0 −10 −20 −30 −40 −50 −60 −IM3 in 3.84 MHz BW −70 − −25 −20 3.84 MHz Channel BW −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW +IM3 in 3.84 MHz BW −15 −10 − FREQUENCY (MHz) Figure 16. 2-Carrier W-CDMA Spectrum MRF6S20010NR1 MRF6S20010GNR1 ...
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... Microstrip Z9 1.142″ x 0.516″ Microstrip Z10 0.433″ x 0.276″ Microstrip Figure 17. MRF6S20010NR1(GNR1) Test Circuit Schematic — 1930 - 1990 MHz Table 7. MRF6S20010NR1(GNR1) Test Circuit Component Designations and Values — 1930 - 1990 MHz Part C1 100 nF Chip Capacitor C2, C6 4.7 pF Chip Capacitors C3, C7 ...
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... N - CDMA TYPICAL CHARACTERISTICS C11 MRF6S20010N Rev 0 Figure 18. MRF6S20010NR1(GNR1) Test Circuit Component Layout — 1930 - 1990 MHz RF Device Data Freescale Semiconductor — 1930 - 1990 MHz R3 MRF6S20010NR1 MRF6S20010GNR1 C10 11 ...
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... Figure 19. Single - Carrier N - CDMA Broadband Performance 1960 MHz, N−CDMA IS−95 40 (Pilot, Sync, Paging, Traffic Codes 8 Through 13 0.1 Figure 20. Single - Carrier N - CDMA ACPR and Drain MRF6S20010NR1 MRF6S20010GNR1 12 — 1930 - 1990 MHz = 28 Vdc (Avg.), I = 500 mA out DQ ACPR IRL 1920 1930 1940 1950 ...
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... FREQUENCY (MHz) MRF6S20010NR1 MRF6S20010GNR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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... Microstrip Z8 0.591″ x 0.334″ Microstrip Z9 0.050″ x 0.980″ Microstrip Figure 23. MRF6S20010NR1(GNR1) Test Circuit Schematic — 1805 - 1880 MHz Table 8. MRF6S20010NR1(GNR1) Test Circuit Component Designations and Values —1805 - 1880 MHz Part C1 100 nF Chip Capacitor C2, C6 4.7 pF Chip Capacitors C3, C7 ...
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... GSM EDGE TYPICAL CHARACTERISTICS C11 MRF6S20010N Rev. 0 Figure 24. MRF6S20010NR1(GNR1) Test Circuit Component Layout — 1805 - 1880 MHz RF Device Data Freescale Semiconductor — 1805 - 1880 MHz R3 MRF6S20010NR1 MRF6S20010GNR1 C10 15 ...
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... Vdc 130 mA − 1840 MHz − 400 kHz −65 −70 −75 −80 0 OUTPUT POWER (WATTS) out Figure 27. Spectral Regrowth at 400 kHz and 600 kHz versus Output Power MRF6S20010NR1 MRF6S20010GNR1 η D IRL Vdc 130 FREQUENCY (MHz Watts out η D EVM OUTPUT POWER (WATTS) AVG. ...
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... DD DQ out source load MHz Ω Ω 1805 13.237 + j5.810 2.445 + j3.698 1840 13.953 + j6.084 2.542 + j3.942 1880 14.858 + j6.279 2.695 + j4.170 = Test circuit impedance as measured from gate to ground. = Test circuit impedance as measured from drain to ground. Output Matching Network MRF6S20010NR1 MRF6S20010GNR1 17 ...
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... MRF6S20010NR1 MRF6S20010GNR1 126 mA 25°C, 50 ohm system ∠ φ 1.195 42.42 0.001 0.947 40.48 0.001 ...
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... MRF6S20010NR1 MRF6S20010GNR1 19 ...
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... MRF6S20010NR1 MRF6S20010GNR1 20 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF6S20010NR1 MRF6S20010GNR1 21 ...
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... MRF6S20010NR1 MRF6S20010GNR1 22 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF6S20010NR1 MRF6S20010GNR1 23 ...
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... MRF6S20010NR1 MRF6S20010GNR1 24 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF6S20010NR1 MRF6S20010GNR1 25 ...
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... Added footnote, Measurement made with device in straight lead configuration before any lead forming operation is applied, to Functional Tests table • Added AN3789, Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages to Product Documentation, Application Notes • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software MRF6S20010NR1 MRF6S20010GNR1 26 REVISION HISTORY Description to V ...
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... Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005 - 2006, 2008 - 2009. All rights reserved. MRF6S20010NR1 MRF6S20010GNR1 27 ...