MRF6S18060NBR1 Freescale Semiconductor, MRF6S18060NBR1 Datasheet

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MRF6S18060NBR1

Manufacturer Part Number
MRF6S18060NBR1
Description
MOSFET RF N-CH 26V 60W TO272-4
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6S18060NBR1

Transistor Type
N-Channel
Frequency
1.81GHz ~ 1.88GHz
Gain
15dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
450mA
Voltage - Test
26V
Power - Output
25W
Package / Case
TO-272-4
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
68V
Output Power (max)
25W
Power Gain (typ)@vds
15/15.5dB
Frequency (min)
1.8GHz
Frequency (max)
2GHz
Package Type
TO-272 WB EP
Pin Count
4
Reverse Capacitance (typ)
1.5@26VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
50%
Mounting
Surface Mount
Mode Of Operation
GSM/GSM EDGE
Number Of Elements
1
Power Dissipation (max)
216000mW
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and
multicarrier amplifier applications.
GSM Application
• Typical GSM Performance: V
GSM EDGE Application
• Typical GSM EDGE Performance: V
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• 225°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 2. Thermal Characteristics
Table 1. Maximum Ratings
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
D e s i g n e d f o r G S M a n d G S M E D G E b a s e s t a t i o n a p p l i c a t i o n s w i t h
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
CW, f = 1990 MHz
P
1930- 1990 MHz)
Output Power
Case Temperature 80°C, 60 W CW
Case Temperature 77°C, 25 W CW
out
Power Gain — 15 dB
Drain Efficiency - 50%
MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
Power Gain — 15.5 dB
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 76 dBc
EVM — 2% rms
= 25 Watts Avg., Full Frequency Band (1805- 1880 MHz or
(1,2)
DD
Characteristic
= 26 Vdc, I
Rating
DD
DD
Operation
= 26 Volts, I
DQ
= 600 mA, P
DQ
= 450 mA,
out
= 60 Watts
Symbol
Symbol
V
R
V
T
T
DSS
T
θJC
GS
stg
Document Number: MRF6S18060N
C
J
MRF6S18060NR1 MRF6S18060NBR1
MRF6S18060NBR1
MRF6S18060NR1
1800- 2000 MHz, 60 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
CASE 1484 - 04, STYLE 1
GSM/GSM EDGE
MRF6S18060NBR1
MRF6S18060NR1
- 65 to +150
Value
TO - 270 WB - 4
TO - 272 WB - 4
- 0.5, +68
- 0.5, +12
Value
PLASTIC
PLASTIC
0.81
0.95
150
225
(2,3)
Rev. 4, 12/2008
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
1

Related parts for MRF6S18060NBR1

MRF6S18060NBR1 Summary of contents

Page 1

... LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 270 PLASTIC MRF6S18060NR1 CASE 1484 - 04, STYLE 272 PLASTIC MRF6S18060NBR1 Symbol Value Unit V - 0.5, +68 Vdc DSS V - 0.5, +12 Vdc +150 °C stg T 150 ° 225 °C J (2,3) Symbol Value Unit R °C/W θJC 0.81 0.95 MRF6S18060NR1 MRF6S18060NBR1 1 ...

Page 2

... Typical CW Performances (In Freescale Broadband Test Fixture, 50 ohm system) V 1805 - 1880 MHz or 1930 - 1990 MHz Power Gain Drain Efficiency Input Return Loss Compression Point, CW out 1. Part is internally matched both on input and output. MRF6S18060NR1 MRF6S18060NBR1 2 Rating 3 = 25°C unless otherwise noted) C Symbol I DSS ...

Page 3

... Microstrip 0.500″ x 0.083″ Microstrip 0.895″ x 0.083″ Microstrip 0.250″ x 0.083″ Microstrip 0.200″ x 0.080″ Microstrip Taconic TLX8 - 0300, 0.030″, ε = 2.55 r Part Number Manufacturer ATC ATC ATC ATC TDK Vishay Vishay Vishay MRF6S18060NR1 MRF6S18060NBR1 RF 3 ...

Page 4

... Figure 2. MRF6S18060NR1(NBR1) Test Circuit Component Layout — 1900 MHz MRF6S18060NR1 MRF6S18060NBR1 C11 C10 MRF6S18060N/NB Rev Device Data Freescale Semiconductor ...

Page 5

... FREQUENCY (MHz) out Vdc 12 100 0 Figure 6. Power Gain versus Output Power 1900 MHz −5 53 −10 − −20 47 −25 2000 2020 = 60 Watts −5 38 −10 − − Vdc = 600 mA 32 −25 2000 2020 = 30 Watts I = 600 1960 MHz OUTPUT POWER (WATTS) CW out MRF6S18060NR1 MRF6S18060NBR1 100 5 ...

Page 6

... Vdc 450 mA DQ − 1960 MHz EDGE Modulation − −30_C C −60 −65 25_C 85_C −70 − OUTPUT POWER (WATTS) AVG. out Figure 11. Spectral Regrowth at 400 kHz versus Output Power MRF6S18060NR1 MRF6S18060NBR1 6 1900 MHz — −30_C 25_C 60 3 2.5 85_C Vdc 1 600 mA 0 ...

Page 7

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. GSM TEST SIGNAL Reference Power VBW = 30 kHz Sweep Time = 70 ms RBW = 30 kHz 400 kHz 600 kHz 200 kHz Figure 14. EDGE Spectrum 230 250 = 50%. D 400 kHz 600 kHz Span 2 MHz MRF6S18060NR1 MRF6S18060NBR1 7 ...

Page 8

... Figure 15. Series Equivalent Source and Load Impedance — 1900 MHz MRF6S18060NR1 MRF6S18060NBR1 Ω 1930 MHz Z source f = 1990 MHz f = 1990 MHz f = 1930 MHz Z load Vdc 600 mA out source load MHz Ω Ω 1930 8.00 - j6.48 2.83 - j5.13 1960 7.57 - j6.82 2.63 - j4.84 1990 7 ...

Page 9

... Microstrip 0.745″ x 0.083″ Microstrip 0.250″ x 0.083″ Microstrip 0.640″ x 0.080″ Microstrip Taconic TLX8 - 0300, 0.030″, ε = 2.55 r Part Number Manufacturer ATC ATC ATC ATC ATC TDK Vishay Vishay Vishay MRF6S18060NR1 MRF6S18060NBR1 RF OUTPUT 9 ...

Page 10

... Figure 17. MRF6S18060NR1(NBR1) Test Circuit Component Layout — 1800 MHz MRF6S18060NR1 MRF6S18060NBR1 C12 V DS C10 C11 MRF6S18060N/NB Rev Device Data Freescale Semiconductor ...

Page 11

... Figure 21. EVM and Drain Efficiency versus 57 0 − −8 51 −12 49 − Vdc = 600 mA 47 −20 1900 1920 −4 39 −8 − − Vdc = 600 mA 33 −20 1900 1920 η 25_C C EVM OUTPUT POWER (WATTS) AVG. out Output Power MRF6S18060NR1 MRF6S18060NBR1 100 11 ...

Page 12

... T = 25_C C −55 −60 −65 −70 − OUTPUT POWER (WATTS) AVG. out Figure 23. Spectral Regrowth at 400 kHz versus Output Power MRF6S18060NR1 MRF6S18060NBR1 Avg. out 25 W Avg 400 kHz 15 W Avg Avg 600 kHz Avg. EDGE Modulation 10 W Avg. 1800 1820 ...

Page 13

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Matching Under Test Network Z Z source load Output Matching Network MRF6S18060NR1 MRF6S18060NBR1 13 ...

Page 14

... MRF6S18060NR1 MRF6S18060NBR1 14 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MRF6S18060NR1 MRF6S18060NBR1 15 ...

Page 16

... MRF6S18060NR1 MRF6S18060NBR1 16 RF Device Data Freescale Semiconductor ...

Page 17

... RF Device Data Freescale Semiconductor MRF6S18060NR1 MRF6S18060NBR1 17 ...

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... MRF6S18060NR1 MRF6S18060NBR1 18 RF Device Data Freescale Semiconductor ...

Page 19

... RF Device Data Freescale Semiconductor MRF6S18060NR1 MRF6S18060NBR1 19 ...

Page 20

... Sheet 1. • Replaced Case Outline 1484 - 04, Issue D, with 1484 - 04, Issue 19. Added pin numbers 1 through 4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. • Added Product Documentation and Revision History MRF6S18060NR1 MRF6S18060NBR1 20 PRODUCT DOCUMENTATION REVISION HISTORY Description ...

Page 21

... Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2008. All rights reserved. MRF6S18060NR1 MRF6S18060NBR1 21 ...

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