MRF6S19100NR1 Freescale Semiconductor, MRF6S19100NR1 Datasheet
MRF6S19100NR1
Specifications of MRF6S19100NR1
Available stocks
Related parts for MRF6S19100NR1
MRF6S19100NR1 Summary of contents
Page 1
... LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 270 PLASTIC MRF6S19100NR1 CASE 1484 - 04, STYLE 272 PLASTIC MRF6S19100NBR1 Symbol Value Unit V - 0.5, +68 Vdc DSS V - 0.5, +12 Vdc +150 °C stg T 150 ° 225 °C J (2,3) Symbol Value Unit R °C/W θJC 0.61 0.65 MRF6S19100NR1 MRF6S19100NBR1 1 ...
Page 2
... N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF6S19100NR1 MRF6S19100NBR1 2 Rating 3 = 25°C unless otherwise noted) C Symbol I ...
Page 3
... Microstrip Z4 0.505″ x 0.800″ Microstrip Z5 0.323″ x 0.040″ Microstrip Z6 0.160″ x 0.880″ Microstrip Figure 1. MRF6S19100NR1(NBR1) Test Circuit Schematic Table 6. MRF6S19100NR1(NBR1) Test Circuit Component Designations and Values Part C1 10 μ Tantalum Capacitor C2 100 nF Chip Capacitor C3, C7 5.1 pF Chip Capacitors C4, C8 ...
Page 4
... MRF6S19100N/NB, Rev. 5 Figure 2. MRF6S19100NR1(NBR1) Test Circuit Component Layout MRF6S19100NR1 MRF6S19100NBR1 C10 C11 C9 RF Device Data Freescale Semiconductor ...
Page 5
... Watts Avg. out 36 35.5 35 34.5 34 −25 −10 −15 −30 −20 −35 −25 −40 −30 −45 −35 −50 −40 2000 = 40 Watts Avg. out = 28 Vdc 1425 475 mA DQ 1190 mA 950 mA 710 mA 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power MRF6S19100NR1 MRF6S19100NBR1 300 5 ...
Page 6
... Vdc 950 1960 MHz OUTPUT POWER (WATTS) CW out Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S19100NR1 MRF6S19100NBR1 6 TYPICAL CHARACTERISTICS P1dB = 51.13 dBm (129. 100 30 Figure 8. Pulsed CW Output Power versus Vdc 950 85_C 1958.75 MHz 1961.25 MHz 2− ...
Page 7
... D 1.2288 MHz Channel BW −IM3 in +IM3 in 1.2288 MHz 1.2288 MHz Integrated BW Integrated BW −ACPR in 30 kHz +ACPR in 30 kHz Integrated BW Integrated BW −6 −4.5 −3 −1.5 0 1.5 3 4.5 f, FREQUENCY (MHz) Figure 14 Carrier N - CDMA Spectrum MRF6S19100NR1 MRF6S19100NBR1 6 7.5 7 ...
Page 8
... Z Z Figure 15. Series Equivalent Source and Load Impedance MRF6S19100NR1 MRF6S19100NBR1 Ω load f = 1930 MHz f = 1990 MHz f = 1990 MHz Vdc 950 mA Avg out source load MHz Ω Ω 1930 2.51 - j4.80 1.74 - j3.11 1960 2.31 - j4.54 1.67 - j2.85 1990 2.12 - j4.20 1.63 - j2.55 ...
Page 9
... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6S19100NR1 MRF6S19100NBR1 9 ...
Page 10
... MRF6S19100NR1 MRF6S19100NBR1 10 RF Device Data Freescale Semiconductor ...
Page 11
... RF Device Data Freescale Semiconductor MRF6S19100NR1 MRF6S19100NBR1 11 ...
Page 12
... MRF6S19100NR1 MRF6S19100NBR1 12 RF Device Data Freescale Semiconductor ...
Page 13
... RF Device Data Freescale Semiconductor MRF6S19100NR1 MRF6S19100NBR1 13 ...
Page 14
... MRF6S19100NR1 MRF6S19100NBR1 14 RF Device Data Freescale Semiconductor ...
Page 15
... Replaced Case Outline 1484 - 04, Issue D, with 1484 - 04, Issue 14. Added pin numbers 1 through 4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. • Added Product Documentation and Revision History Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description Removed Forward Transconductance from On Characteristics table and listed MRF6S19100NR1 MRF6S19100NBR1 15 ...
Page 16
... P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 303 - 675 - 2140 Fax 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6S19100NR1 MRF6S19100NBR1 Document Number: MRF6S19100N Rev. 2, 12/2008 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...