MRF6S19100GNR1 Freescale Semiconductor, MRF6S19100GNR1 Datasheet
MRF6S19100GNR1
Specifications of MRF6S19100GNR1
Available stocks
Related parts for MRF6S19100GNR1
MRF6S19100GNR1 Summary of contents
Page 1
... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts, I ...
Page 2
... Package Peak Temperature Unit 260 °C Min Typ Max Unit — — 10 μAdc — — 1 μAdc — — 1 μAdc Vdc 2 2.8 4 Vdc — 0.24 — Vdc — 1.5 — Avg 1987 MHz Carrier out dBc - dBc — Device Data Freescale Semiconductor ...
Page 3
... C3, C7 5.1 pF Chip Capacitors C4, C8, C9 9.1 pF Chip Capacitors C5, C6, C10, C11 10 μ Chip Capacitors R1 1 kΩ, 1/4 W Chip Resistor R2 10 kΩ, 1/4 W Chip Resistor R3 10 Ω, 1/4 W Chip Resistor RF Device Data Freescale Semiconductor Z12 Z11 DUT Z7 0.319″ x 0.880″ Microstrip Z8 0.355″ ...
Page 4
... MRF6S19100N/NB, Rev. 5 Figure 2. MRF6S19100NR1(NBR1) Test Circuit Component Layout MRF6S19100NR1 MRF6S19100NBR1 C10 C11 C9 RF Device Data Freescale Semiconductor ...
Page 5
... MHz 1961.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS η Vdc (Avg.), I DD out DQ 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing 1 ...
Page 6
... Vdc 950 Pulsed CW, 8 μsec(on), 1 msec(off 1960 MHz INPUT POWER (dBm) in Input Power −20 −30_C 85_C −30 25_C −30_C −40 −50 −30_C 25_C −60 −70 100 200 950 1960 MHz 50 100 150 P , OUTPUT POWER (WATTS) CW out RF Device Data Freescale Semiconductor 42 200 ...
Page 7
... Offset. IM3 Measured in 1.2288 MHz Bandwidth @ ±2.5 MHz Offset. PAR = 9 0.001 0.01% Probability on CCDF. 0.0001 PEAK−TO−AVERAGE (dB) Figure 13 Carrier CCDF N - CDMA RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 90 110 130 150 170 190 T , JUNCTION TEMPERATURE (°C) J This above graph displays calculated MTTF in hours when the device = 22 W Avg., and η ...
Page 8
... Test circuit impedance as measured from source gate to ground. = Test circuit impedance as measured load from drain to ground. Device Input Matching Under Network Test Z Z source load f = 1930 MHz Z source Output Matching Network RF Device Data Freescale Semiconductor ...
Page 9
... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6S19100NR1 MRF6S19100NBR1 9 ...
Page 10
... MRF6S19100NR1 MRF6S19100NBR1 10 RF Device Data Freescale Semiconductor ...
Page 11
... RF Device Data Freescale Semiconductor MRF6S19100NR1 MRF6S19100NBR1 11 ...
Page 12
... MRF6S19100NR1 MRF6S19100NBR1 12 RF Device Data Freescale Semiconductor ...
Page 13
... RF Device Data Freescale Semiconductor MRF6S19100NR1 MRF6S19100NBR1 13 ...
Page 14
... MRF6S19100NR1 MRF6S19100NBR1 14 RF Device Data Freescale Semiconductor ...
Page 15
... Replaced Case Outline 1484 - 04, Issue D, with 1484 - 04, Issue 14. Added pin numbers 1 through 4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. • Added Product Documentation and Revision History Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description ...
Page 16
... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...