MRF6S21100NR1 Freescale Semiconductor, MRF6S21100NR1 Datasheet
MRF6S21100NR1
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MRF6S21100NR1 Summary of contents
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... RF POWER MOSFETs CASE 1486-03, STYLE 1 TO-270 WB-4 PLASTIC MRF6S21100NR1 CASE 1484-04, STYLE 1 TO-272 WB-4 PLASTIC MRF6S21100NBR1 Symbol Value Unit V -0.5, +68 Vdc DSS V -0.5, +12 Vdc GS °C T -65 to +150 stg °C T 150 C °C T 225 J (2,3) Symbol Value Unit °C/W R θJC 0.57 0.66 MRF6S21100NR1 MRF6S21100NBR1 1 ...
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... Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 11/ Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit GG GS(Q) schematic. 2. Part is internally matched both on input and output. MRF6S21100NR1 MRF6S21100NBR1 2 Rating 3 = 25°C unless otherwise noted) A Symbol I DSS I ...
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... Microstrip Z4 0.420″ x 0.800″ Microstrip Z5 1.231″ x 0.040″ Microstrip Z6 0.100″ x 0.880″ Microstrip Figure 1. MRF6S21100NR1(NBR1) Test Circuit Schematic Table 6. MRF6S21100NR1(NBR1) Test Circuit Component Designations and Values Part B1 Ferrite Bead 10 μ Tantalum Capacitor C1 0.01 μF Chip Capacitor C2 C3, C4, C10 5 ...
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... MRF6S21100N/NB, Rev. 3 Figure 2. MRF6S21100NR1(NBR1) Test Circuit Component Layout MRF6S21100NR1 MRF6S21100NBR1 C11 C12 C10 RF Device Data Freescale Semiconductor ...
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... Figure 6. Third Order Intermodulation Distortion -31 -34 -10 - -12 -40 -13 -43 -46 -14 2240 = 22.5 Watts Avg. out -24 -10 -26 - -12 -30 -13 -32 -34 -14 2240 = 45 Watts Avg. out 1575 525 mA DQ 1312 mA 1050 mA 787 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power MRF6S21100NR1 MRF6S21100NBR1 300 5 ...
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... T = -30_C C 15 25_C 14 85_C 13 12 η 0 OUTPUT POWER (WATTS) CW out Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S21100NR1 MRF6S21100NBR1 6 TYPICAL CHARACTERISTICS P1dB = 51.3 dBm (135 100 300 32 Figure 8. Pulsed CW Output Power versus - Vdc 1050 mA 2135 MHz DD DQ η D 25_C ...
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... W Avg., and η Vdc 25.5%. DD out D W-CDMA TEST SIGNAL +20 +30 0 -10 -20 -30 -40 -50 -60 -IM3 in 3.84 MHz BW -70 -80 - 230 250 3.84 MHz Channel BW -ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW +IM3 in 3.84 MHz BW -15 - FREQUENCY (MHz) Figure 14. 2‐Carrier W‐CDMA Spectrum MRF6S21100NR1 MRF6S21100NBR1 ...
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... Z source Ω MHz 2110 3.51 - j3.78 2140 3.50 - j3.83 2170 3.29 - j3. Input Matching Network Figure 15. Series Equivalent Source and Load Impedance MRF6S21100NR1 MRF6S21100NBR1 2170 MHz = 23 W Avg load Ω MHz 1.62 - j3.54 2110 1.51 - j3.26 2140 1.41 - j2.95 2170 = Test circuit impedance as measured from source gate to ground ...
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... Microstrip Z4 0.090″ x 0.800″ Microstrip Z5 1.500″ x 0.040″ Microstrip Z6 0.160″ x 0.880″ Microstrip Figure 16. MRF6S21100NR1(NBR1) Test Circuit Schematic Table 7. MRF6S21100NR1(NBR1) Test Circuit Component Designations and Values Part B1 Ferrite Bead 10 μ Tantalum Capacitor C1 0.01 μF Chip Capacitor C2 C3, C4, C10 5 ...
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... MRF6S21100N/NB, Rev. 3 Figure 17. MRF6S21100NR1(NBR1) Test Circuit Component Layout — TD-SCDMA MRF6S21100NR1 MRF6S21100NBR1 C10 C11 C12 RF Device Data Freescale Semiconductor ...
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... Figure 21. 6-Carrier TD-SCDMA Spectrum 18 Adj-U 15 Adj Alt 7.5 1.28 MHz Channel BW VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz +ALT2 in 1.28 MHz BW +3.2 MHz Offset - +ALT1 in 1.28 MHz BW 1.28 MHz BW -1.6 MHz Offset +1.6 MHz Offset 2.5 MHz Span 25 MHz f, FREQUENCY (MHz) MRF6S21100NR1 MRF6S21100NBR1 11 ...
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... MHz Figure 22. Series Equivalent Source and Load Impedance — TD-SCDMA MRF6S21100NR1 MRF6S21100NBR1 Ω 1950 MHz f = 2070 MHz Z load f = 1950 MHz Z source Vdc 900 source load W W MHz 1950 1.43 - j4.56 3.61 - j4.19 1960 1.57 - j4.80 3.86 - j4.40 1970 1.72 - j5.12 4 ...
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... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6S21100NR1 MRF6S21100NBR1 13 ...
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... MRF6S21100NR1 MRF6S21100NBR1 14 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF6S21100NR1 MRF6S21100NBR1 15 ...
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... MRF6S21100NR1 MRF6S21100NBR1 16 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF6S21100NR1 MRF6S21100NBR1 17 ...
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... MRF6S21100NR1 MRF6S21100NBR1 18 RF Device Data Freescale Semiconductor ...
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... Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description and removed Min and Max value for V GS( the RF test condition voltage callout for Characteristics table to account for the 2 and listed , On Characteristics table GS(Q) and Z copy to source load MRF6S21100NR1 MRF6S21100NBR1 19 ...
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... For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1-800-441-2447 or +1-303-675-2140 Fax: +1-303-675-2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6S21100NR1 MRF6S21100NBR1 Document Number: MRF6S21100N Rev. 3, 12/2008 20 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...