MRF6S19100HSR3 Freescale Semiconductor, MRF6S19100HSR3 Datasheet

MOSFET RF N-CHAN 28V 22W NI-780S

MRF6S19100HSR3

Manufacturer Part Number
MRF6S19100HSR3
Description
MOSFET RF N-CHAN 28V 22W NI-780S
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6S19100HSR3

Transistor Type
N-Channel
Frequency
1.99GHz
Gain
16.1dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
900mA
Voltage - Test
28V
Power - Output
22W
Package / Case
NI-780S
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
68V
Output Power (max)
22W
Power Gain (typ)@vds
16.1dB
Frequency (min)
1.93GHz
Frequency (max)
1.99GHz
Package Type
NI-780S
Pin Count
3
Reverse Capacitance (typ)
1.5@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
28%
Mounting
Surface Mount
Mode Of Operation
2-Carrier N-CDMA/CDMA/TDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF6S19100HSR3
Manufacturer:
FREESCALE
Quantity:
1 400
Part Number:
MRF6S19100HSR3
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2004 - 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - Carrier N - CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 2. Thermal Characteristics
Table 1. Maximum Ratings
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for N - CDMA base station applications with frequencies from 1930
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
P
Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB
@ 0.01% Probability on CCDF.
Output Power
Applications
Case Temperature 80°C, 100 W CW
Case Temperature 77°C, 22 W CW
out
Power Gain — 16.1 dB
Drain Efficiency — 28%
IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth
MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
= 22 Watts Avg., f = 1987 MHz, IS - 95 (Pilot, Sync, Paging, Traffic
(1,2)
Characteristic
Rating
DD
Operation
DD
= 28 Volts, I
DQ
= 900 mA,
Symbol
Symbol
V
R
V
T
T
DSS
T
θJC
GS
stg
Document Number: MRF6S19100H
C
J
CASE 465A - 06, STYLE 1
CASE 465 - 06, STYLE 1
MRF6S19100HR3 MRF6S19100HSR3
1930- 1990 MHz, 22 W AVG., 28 V
MRF6S19100HSR3
MRF6S19100HSR3
MRF6S19100HR3
MRF6S19100HR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780S
NI - 780
- 65 to +150
Value
2 x N - CDMA
- 0.5, +68
- 0.5, +12
Value
0.44
0.50
150
225
(2,3)
Rev. 5, 12/2008
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
1

Related parts for MRF6S19100HSR3

MRF6S19100HSR3 Summary of contents

Page 1

... MHz AVG CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 780 MRF6S19100HR3 CASE 465A - 06, STYLE 780S MRF6S19100HSR3 Symbol Value Unit V - 0.5, +68 Vdc DSS V - 0.5, +12 Vdc +150 °C stg T 150 ° 225 °C J (2,3) Symbol Value Unit R °C/W θJC 0.44 0.50 MRF6S19100HR3 MRF6S19100HSR3 1 ...

Page 2

... N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF6S19100HR3 MRF6S19100HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I ...

Page 3

... ATC100B150CT500XT ATC100B5R6JT500XT T491C105K050AT ATC100B430CT500XT T491X226K035AT T491C106K035AT C1825C14J5RAC MCHT101M1HB- 1017 - RH CRCW120612R0FKEA CRCW12062001FKEA V SUPPLY + + + + C10 C11 C12 OUTPUT Z8 Z9 Z10 Z11 C6 = 2.55 r Part Number Manufacturer Fair - Rite Johanson Dielectrics ATC ATC Kemet ATC Kemet Kemet Kemet Multicomp Vishay Vishay MRF6S19100HR3 MRF6S19100HSR3 RF 3 ...

Page 4

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF6S19100HR3(HSR3) Test Circuit Component Layout MRF6S19100HR3 MRF6S19100HSR3 ...

Page 5

... Watts Avg. out −25 −5 −30 −10 −35 −15 −40 −20 −45 1980 1990 = 44 Watts Avg. out = 28 Vdc 1958.75 MHz 1961.25 MHz I = 450 mA 675 mA DQ 1125 mA 900 mA 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power MRF6S19100HR3 MRF6S19100HSR3 300 5 ...

Page 6

... Probability (CCDF Figure Carrier N - CDMA ACPR, IM3, Power Gain η OUTPUT POWER (WATTS) CW out Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S19100HR3 MRF6S19100HSR3 6 TYPICAL CHARACTERISTICS P1dB = 50.9 dBm (124 100 30 31 Figure 8. Pulsed CW Output Power versus = 28 Vdc 900 100 P , OUTPUT POWER (WATTS) AVG ...

Page 7

... Figure 14 Carrier N - CDMA Spectrum 230 250 = 28%. 1.2288 MHz Channel BW −IM3 in +IM3 in 1.2288 MHz 1.2288 MHz Integrated BW Integrated BW −ACPR in 30 kHz +ACPR in 30 kHz Integrated BW Integrated BW −4.5 −3 −1.5 0 1.5 3 4.5 f, FREQUENCY (MHz) MRF6S19100HR3 MRF6S19100HSR3 6 7.5 7 ...

Page 8

... Figure 15. Series Equivalent Source and Load Impedance MRF6S19100HR3 MRF6S19100HSR3 1990 MHz f = 1930 MHz Z load f = 1990 MHz = 5 Ω 1930 MHz Vdc 900 mA Avg out source load MHz Ω Ω 1930 1.57 - j3.50 2.26 - j2.31 1960 1.83 - j3.29 2.22 - j2.13 1990 2.34 - j3.71 2 ...

Page 9

... REF 0.127 REF F bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF6S19100HR3 MRF6S19100HSR3 MAX 34.16 9.91 4.32 12.83 1.14 0.15 1.70 5.33 19.96 20.00 3.51 9.53 9.52 9 ...

Page 10

... Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations • Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps operating characteristics and location of MTTF calculator for device • Added Product Documentation and Revision History MRF6S19100HR3 MRF6S19100HSR3 10 PRODUCT DOCUMENTATION REVISION HISTORY Description ...

Page 11

... Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2004 - 2006, 2008. All rights reserved. MRF6S19100HR3 MRF6S19100HSR3 11 ...

Related keywords