MRF6S21100HR3 Freescale Semiconductor, MRF6S21100HR3 Datasheet

MOSFET RF N-CHAN 28V 23W NI-780

MRF6S21100HR3

Manufacturer Part Number
MRF6S21100HR3
Description
MOSFET RF N-CHAN 28V 23W NI-780
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6S21100HR3

Transistor Type
N-Channel
Frequency
2.11GHz
Gain
15.9dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
950mA
Voltage - Test
28V
Power - Output
23W
Package / Case
NI-780
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
68V
Output Power (max)
23W
Power Gain (typ)@vds
15.9dB
Frequency (min)
2.11GHz
Frequency (max)
2.17GHz
Package Type
NI-780
Pin Count
3
Reverse Capacitance (typ)
1.5@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
27.6%
Mounting
Screw
Mode Of Operation
2-Carrier W-CDMA/CDMA/TDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF6S21100HR3
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and
TD - SCDMA applications.
• Typical 2 - carrier W - CDMA Performance for V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for W - CDMA base station applications with frequencies from 2110
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
P
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Output Power
Applications
Case Temperature 80°C, 100 W CW
Case Temperature 77°C, 23 W CW
out
Power Gain — 15.9 dB
Drain Efficiency — 27.6%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 39.5 dBc in 3.84 MHz Channel Bandwidth
the MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
= 23 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz,
Characteristic
Rating
DD
Operation
DD
= 28 Volts, I
DQ
= 950 mA,
Symbol
Symbol
V
R
V
T
DSS
T
T
θJC
GS
stg
c
J
Document Number: MRF6S21100H
CASE 465A - 06, STYLE 1
CASE 465 - 06, STYLE 1
MRF6S21100HR3 MRF6S21100HSR3
2110 - 2170 MHz, 23 W AVG., 28 V
MRF6S21100HSR3
MRF6S21100HR3
MRF6S21100HSR3
MRF6S21100HR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780S
NI - 780
- 65 to +150
2 x W - CDMA
Value
- 0.5, +68
- 0.5, +12
Value
0.45
0.52
150
200
(1,2)
Rev. 7, 1/2007
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
1

Related parts for MRF6S21100HR3

MRF6S21100HR3 Summary of contents

Page 1

... MHz AVG CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 780 MRF6S21100HR3 CASE 465A - 06, STYLE 780S MRF6S21100HSR3 Symbol Value Unit V - 0.5, +68 Vdc DSS V - 0.5, +12 Vdc +150 °C stg T 150 ° 200 °C J (1,2) Symbol Value Unit R °C/W θJC 0.45 0.52 MRF6S21100HR3 MRF6S21100HSR3 1 ...

Page 2

... MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF6S21100HR3 MRF6S21100HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I ...

Page 3

... Microstrip Z4 0.093″ x 0.800″ Microstrip Z5 1.255″ x 0.040″ Microstrip Z6 0.160″ x 0.880″ Microstrip Figure 1. MRF6S21100HR3(SR3) Test Circuit Schematic Table 5. MRF6S21100HR3(SR3) Test Circuit Component Designations and Values Part B1 Ferrite Bead C1 1.0 μ Tantalum Capacitor C2 10 μ Electrolytic Capacitor ...

Page 4

... Figure 2. MRF6S21100HR3(SR3) Test Circuit Component Layout MRF6S21100HR3 MRF6S21100HSR3 C11 C12 C14 C9 C10 V DD C13 C7 2.1 GHz NI780 Rev 4 RF Device Data Freescale Semiconductor ...

Page 5

... Watts Avg. out 44 η −24 −10 −26 −20 −28 −30 −30 −40 2200 = 55 Watts Avg. out = 28 Vdc 2135 MHz 2145 MHz DD 1200 mA = 450 mA DQ 1450 mA 950 mA 700 OUTPUT POWER (WATTS) PEP out versus Output Power MRF6S21100HR3 MRF6S21100HSR3 100 5 ...

Page 6

... η OUTPUT POWER (WATTS) CW out Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S21100HR3 MRF6S21100HSR3 6 TYPICAL CHARACTERISTICS 100 28 Figure 8. Pulsed CW Output Power versus Vdc 950 2135 MHz 2145 MHz 2−Carrier W−CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth PAR = 8 0.01% Probability (CCDF) ...

Page 7

... D 3.84 MHz Channel BW −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW −IM3 in +IM3 in 3.84 MHz BW 3.84 MHz BW −20 −15 −10 − FREQUENCY (MHz) Figure 14. 2-Carrier W-CDMA Spectrum MRF6S21100HR3 MRF6S21100HSR3 ...

Page 8

... MHz Z Z Figure 15. Series Equivalent Source and Load Impedance MRF6S21100HR3 MRF6S21100HSR3 Ω load f = 2080 MHz f = 2200 MHz Z source f = 2080 MHz Vdc 950 mA Avg out source load MHz Ω Ω 2080 2.44 - j6.3 1.83 - j3.0 2110 2.25 - j6.1 1.74 - j2.8 2140 2 ...

Page 9

... Z4 0.090″ x 0.800″ Microstrip Z5 1.500″ x 0.040″ Microstrip Z6 0.160″ x 0.880″ Microstrip Figure 16. MRF6S21100HR3(SR3) Test Circuit Schematic — SCDMA Table 6. MRF6S21100HR3(SR3) Test Circuit Component Designations and Values — SCDMA Part B1 Ferrite Bead C1 1.0 μ Tantalum Capacitor C2 10 μ Electrolytic Capacitor ...

Page 10

... Figure 17. MRF6S21100HR3(SR3) Test Circuit Component Layout — SCDMA MRF6S21100HR3 MRF6S21100HSR3 C11 C14 C9 C10 V DD C13 C12 C7 2.1 GHz NI780 Rev 4 RF Device Data Freescale Semiconductor ...

Page 11

... Adj −U 9 Alt− 7.5 1.28 MHz Channel BW VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz +ALT2 in 1.28 MHz BW +3.2 MHz Offset −ALT1 in +ALT1 in 1.28 MHz BW 1.28 MHz BW −1.6 MHz Offset +1.6 MHz Offset 2.5 MHz Span 25 MHz f, FREQUENCY (MHz) MRF6S21100HR3 MRF6S21100HSR3 11 ...

Page 12

... Figure 22. Series Equivalent Source and Load Impedance — SCDMA MRF6S21100HR3 MRF6S21100HSR3 Ω 2070 MHz Z load f = 1950 MHz Z source f = 1950 MHz f = 2070 MHz Vdc 800 source load MHz W W 1950 1.04 - j4.28 1.38 - j3.90 1960 1.07 - j4.31 1.41 - j3.92 1970 0.96 - j4.13 1 ...

Page 13

... REF 0.127 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE F 5. SOURCE MRF6S21100HR3 MRF6S21100HSR3 MAX 34.16 9.91 4.32 12.83 1.14 0.15 1.70 5.33 19.96 20.00 3.51 9.53 9.52 9.91 4.32 1.14 ...

Page 14

... MTTF calculator for device • Added TD - SCDMA test circuit schematic, component designations and values, component layout, typical characteristic curves, test signal and series impedance • Added Product Documentation and Revision History MRF6S21100HR3 MRF6S21100HSR3 14 PRODUCT DOCUMENTATION REVISION HISTORY ...

Page 15

... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007. All rights reserved. MRF6S21100HR3 MRF6S21100HSR3 15 ...

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