MRF7S15100HR3 Freescale Semiconductor, MRF7S15100HR3 Datasheet - Page 10

• Manufacturer Part Number: MRF7S15100HR3
• Description: MOSFET RF N-CH 28V 23W NI780
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S15100HR3

• Transistor Type: N-Channel
• Frequency: 1.51GHz
• Gain: 19.5dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 600mA
• Voltage - Test: 28V
• Power - Output: 23W
• Package / Case: NI-780
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 23W
• Power Gain (typ)@vds: 19.5dB
• Frequency (min): 1.47GHz
• Frequency (max): 1.51GHz
• Package Type: NI-780
• Pin Count: 3
• Input Capacitance (typ)@vds: 176@28VpF
• Output Capacitance (typ)@vds: 300@28VpF
• Reverse Capacitance (typ): 0.6@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 32%
• Mounting: Screw
• Mode Of Operation: 1-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRF7S15100HR3 MRF7S15100HSR3
10
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
56
55
54
53
52
51
50
49
48
47
46
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
27
P1dB
Figure 13. Pulsed CW Output Power
28
P1dB = 50.95 dBm (125 W)
Test Impedances per Compression Level
versus Input Power @ 28 V
29
30
P
2.02 + j6.21
in
, INPUT POWER (dBm)
Z
P3dB = 51.63 dBm (146 W)
V
10 μsec(on), 10% Duty Cycle, f = 1500 MHz
source
DD
31
Ω
= 28 Vdc, I
32
DQ
33
= 600 mA, Pulsed CW
2.00 - j3.65
34
Z
load
Ω
35
Ideal
36
Actual
37
Freescale Semiconductor
RF Device Data