MRF7S15100HR3 Freescale Semiconductor, MRF7S15100HR3 Datasheet - Page 9

• Manufacturer Part Number: MRF7S15100HR3
• Description: MOSFET RF N-CH 28V 23W NI780
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S15100HR3

• Transistor Type: N-Channel
• Frequency: 1.51GHz
• Gain: 19.5dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 600mA
• Voltage - Test: 28V
• Power - Output: 23W
• Package / Case: NI-780
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 23W
• Power Gain (typ)@vds: 19.5dB
• Frequency (min): 1.47GHz
• Frequency (max): 1.51GHz
• Package Type: NI-780
• Pin Count: 3
• Input Capacitance (typ)@vds: 176@28VpF
• Output Capacitance (typ)@vds: 300@28VpF
• Reverse Capacitance (typ): 0.6@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 32%
• Mounting: Screw
• Mode Of Operation: 1-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
Figure 12. Series Equivalent Source and Load Impedance
Input
Matching
Network
Z
Z
source
load
1410
1430
1450
1470
1490
1510
1530
1550
1570
MHz
f
V
f = 1570 MHz
DD
= Test circuit impedance as measured from
= Test circuit impedance as measured
= 28 Vdc, I
gate to ground.
from drain to ground.
Z
f = 1570 MHz
source
2.51 - j5.82
2.53 - j5.58
2.55 - j5.36
2.58 - j5.15
2.62 - j4.97
2.67 - j4.81
2.73 - j4.68
2.79 - j4.57
2.85 - j4.49
Z
source
DQ
Device
Under
Test
W
Z
source
= 600 mA, P
Z
load
Z
f = 1410 MHz
out
load
f = 1410 MHz
= 23 W Avg.
4.12 - j4.20
3.95 - j4.07
3.78 - j3.94
3.61 - j3.80
3.45 - j3.65
3.30 - j3.51
3.15 - j3.37
3.00 - j3.22
2.87 - j3.06
Z
Z
o
load
W
= 10 Ω
Output
Matching
Network
MRF7S15100HR3 MRF7S15100HSR3
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