MRF7S15100HR3 Freescale Semiconductor, MRF7S15100HR3 Datasheet - Page 8

• Manufacturer Part Number: MRF7S15100HR3
• Description: MOSFET RF N-CH 28V 23W NI780
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S15100HR3

• Transistor Type: N-Channel
• Frequency: 1.51GHz
• Gain: 19.5dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 600mA
• Voltage - Test: 28V
• Power - Output: 23W
• Package / Case: NI-780
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 23W
• Power Gain (typ)@vds: 19.5dB
• Frequency (min): 1.47GHz
• Frequency (max): 1.51GHz
• Package Type: NI-780
• Pin Count: 3
• Input Capacitance (typ)@vds: 176@28VpF
• Output Capacitance (typ)@vds: 300@28VpF
• Reverse Capacitance (typ): 0.6@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 32%
• Mounting: Screw
• Mode Of Operation: 1-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRF7S15100HR3 MRF7S15100HSR3
8
0.0001
0.001
0.01
100
0.1
10
1
0
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Figure 10. CCDF W - CDMA IQ Magnitude
1
Clipping, Single - Carrier Test Signal
2
3
PEAK−TO−AVERAGE (dB)
Input Signal
4
5
6
7
W - CDMA TEST SIGNAL
8
9
10
−100
−10
−20
−30
−40
−50
−60
−70
−80
−90
10
0
−9
Figure 11. Single - Carrier W - CDMA Spectrum
−ACPR in 3.84 MHz
−7.2
Integrated BW
−5.4
−3.6
f, FREQUENCY (MHz)
−1.8
Channel BW
3.84 MHz
0
Freescale Semiconductor
1.8
+ACPR in 3.84 MHz
3.6
Integrated BW
RF Device Data
5.4
7.2
9