MRF6S23140HSR5 Freescale Semiconductor, MRF6S23140HSR5 Datasheet

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MRF6S23140HSR5

Manufacturer Part Number
MRF6S23140HSR5
Description
MOSFET RF N-CHAN 28W 28W NI-880S
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6S23140HSR5

Transistor Type
N-Channel
Frequency
2.39GHz
Gain
15.2dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
1.3A
Voltage - Test
28V
Power - Output
28W
Package / Case
NI-880S
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
68V
Output Power (max)
28W
Power Gain (typ)@vds
15.2dB
Frequency (min)
2.3GHz
Frequency (max)
2.4GHz
Package Type
NI-880S
Pin Count
3
Reverse Capacitance (typ)
2@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
25%
Mounting
Surface Mount
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF6S23140HSR5
Manufacturer:
TOKO
Quantity:
3 072
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
To be used in Class AB and Class C WLL applications.
Features
Freescale Semiconductor
Technical Data
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Designed for CDMA base station applications with frequencies from 2300 to
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Typical 2 - Carrier W - CDMA Performance: V
P
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2390 MHz, 140 Watts CW
Output Power
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Case Temperature 82 C, 140 W CW
Case Temperature 75 C, 28 W CW
out
Power Gain — 15.2 dB
Drain Efficiency — 25%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Channel Bandwidth
MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
= 28 Watts Avg., f = 2390 MHz, Channel Bandwidth = 3.84 MHz,
Test Methodology
(1,2)
Characteristic
Rating
DD
Operation
DD
= 28 Volts, I
DQ
= 1300 mA,
Symbol
Symbol
V
R
V
T
T
DSS
T
GS
stg
C
JC
J
Document Number: MRF6S23140H
CASE 465B - 03, STYLE 1
CASE 465C - 02, STYLE 1
MRF6S23140HR3 MRF6S23140HSR3
2300 - 2400 MHz, 28 W AVG., 28 V
MRF6S23140HSR3
MRF6S23140HR3
MRF6S23140HSR3
MRF6S23140HR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 880S
NI - 880
IV (Minimum)
A (Minimum)
2 (Minimum)
- 65 to +150
Value
2 x W - CDMA
- 0.5, +68
- 0.5, +12
Value
Class
0.29
0.33
150
225
(2,3)
Rev. 2, 12/2008
Unit
Unit
Vdc
Vdc
C/W
C
C
C
1

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MRF6S23140HSR5 Summary of contents

Page 1

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts, I ...

Page 2

... ACPR IRL Min Typ Max Unit — — 10 Adc — — 1 Adc — — 500 Vdc 2 2.8 4 Vdc 0.1 0.21 0.3 Vdc — 2 — Avg 2390 MHz Carrier out 13 15 — % — dBc — dBc — — Device Data Freescale Semiconductor ...

Page 3

... F, 100 V Chip Capacitors C10, C14, C17, C21 2 Chip Capacitors C11, C15 Tantalum Chip Capacitors C12, C16 Tantalum Chip Capacitors C18, C19, C22, C23 Chip Capacitors C20, C24 330 Electrolytic Capacitors 1/4 W Chip Resistor RF Device Data Freescale Semiconductor Z12 B1 Z11 C3 Z9 Z10 Z13 Z8 DUT C4 ...

Page 4

... R1 C12 C11 C10* C1 C16 C15 C14* * Stacked Figure 2. MRF6S23140HR3(SR3) Test Circuit Component Layout MRF6S23140HR3 MRF6S23140HSR3 C9 C13* C19 C5 C20 C17 C18 C2 MRF6S23140H Rev 3 C21 C22 C24 C7 C23 RF Device Data Freescale Semiconductor ...

Page 5

... MHz 2355 MHz Two−Tone Measurements, 10 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS = 28 Vdc (Avg.) out = 1300 mA, 2−Carrier W−CDMA IM3 IRL 2290 2310 2330 ...

Page 6

... C 25_C 85_C IM3 ACPR OUTPUT POWER (WATTS) AVG. out and Drain Efficiency versus Output Power 100 Ideal Actual 43 −20 25_C 85_C −25 −30_C −30 85_C 25_C −35 −30_C −40 −45 −50 −55 100 300 RF Device Data Freescale Semiconductor ...

Page 7

... 2350 MHz 0 OUTPUT POWER (WATTS) CW out Figure 10. Power Gain and Drain Efficiency versus Output Power Figure 12. MTTF Factor versus Junction Temperature RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 16 60 −30_C 25_C 50 15 85_C 100 300 0 Figure 11. Power Gain versus Output Power 90 110 ...

Page 8

... W - CDMA TEST SIGNAL +20 +30 0 −10 −20 −30 −40 −50 −60 −IM3 in 3.84 MHz BW −70 −80 −25 − Figure 14. 2-Carrier W-CDMA Spectrum 3.84 MHz Channel BW −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW +IM3 in 3.84 MHz BW −15 −10 − FREQUENCY (MHz) RF Device Data Freescale Semiconductor 25 ...

Page 9

... 2300 MHz f = 2400 MHz Figure 15. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor Z source f = 2300 MHz f = 2400 MHz Z load Vdc 1300 mA Avg out source MHz W 2300 12.92 + j6.65 1.05 - j2.88 2310 13.06 + j6.73 1.04 - j2.82 2320 13.21 + j6.80 1.03 - j2.76 2330 13 ...

Page 10

... N 0.871 0.889 19.30 22.60 R 0.515 0.525 13.10 13.30 S 0.515 0.525 13.10 13.30 aaa 0.007 REF 0.178 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE F RF Device Data Freescale Semiconductor ...

Page 11

... Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps operating characteristics and location of MTTF calculator for device Added Product Documentation and Revision History Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description the RF test condition voltage callout for V ...

Page 12

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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