MRF6VP3450HR6 Freescale Semiconductor, MRF6VP3450HR6 Datasheet - Page 10

• Manufacturer Part Number: MRF6VP3450HR6
• Description: MOSFET RF N-CH 450W NI-1230
• Manufacturer: Freescale Semiconductor

Specifications of MRF6VP3450HR6

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 860MHz
• Gain: 22.5dB
• Voltage - Rated: 110V
• Current Rating: 10µA
• Current - Test: 1.4A
• Voltage - Test: 50V
• Power - Output: 90W
• Package / Case: NI-1230
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

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MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
Figure 21. Single- -Carrier DVB- -T OFDM ACPR, Power Gain
and Drain Efficiency versus Output Power — 470- -860 MHz
22.5
21.5
20.5
19.5
18.5
17.5
50
45
40
35
30
25
20
15
10
27
26
25
24
23
22
21
20
19
18
17
23
22
21
20
19
18
17
5
0
TYPICAL CHARACTERISTICS — 470- -860 MHz
Figure 19. Broadband Pulsed Power Gain and Drain
Figure 20. Pulsed Power Gain and Drain Efficiency
470
10
3
Efficiency versus Output Power — 470- -860 MHz
665 MHz
ACPR
V
64 QAM Data Carrier Modulation, 5 Symbols
665 MHz
DD
500 530 560 590 620 650 680 710 740 770 800 830
versus Frequency at P1dB — 470- -860 MHz
860 MHz
= 50 Vdc, I
665 MHz
470 MHz
P
470 MHz
P1dB
out
P
DQ
η
out
10
, OUTPUT POWER (WATTS) PULSED
G
D
, OUTPUT POWER (WATTS) AVG.
η
= 1400 mA, 8K Mode OFDM
ps
860 MHz
D
V
Pulse Width = 50 μsec, Duty Cycle = 2.5%
V
Pulse Width = 50 μsec, Duty Cycle = 2.5%
f, FREQUENCY (MHz)
DD
DD
= 50 Vdc, P
= 50 Vdc, I
860 MHz
η
D
100
G
ps
G
DQ
ps
out
= 1200 mA
= P1dB, I
470 MHz
665 MHz
DQ
100
= 1200 mA
860 MHz
470 MHz
1000
300
860
--50
--55
--60
--65
--70
--75
70
60
50
40
30
20
60
50
40
30
20
10
0
700
650
600
550
500
450
Freescale Semiconductor
RF Device Data