MRF6VP3450HR6 Freescale Semiconductor, MRF6VP3450HR6 Datasheet - Page 9

• Manufacturer Part Number: MRF6VP3450HR6
• Description: MOSFET RF N-CH 450W NI-1230
• Manufacturer: Freescale Semiconductor

Specifications of MRF6VP3450HR6

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 860MHz
• Gain: 22.5dB
• Voltage - Rated: 110V
• Current Rating: 10µA
• Current - Test: 1.4A
• Voltage - Test: 50V
• Power - Output: 90W
• Package / Case: NI-1230
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
22.5
21.5
20.5
0.0001
23
22
21
20
0.001
0.01
100
20
0.1
10
1
975 mA
Figure 16. Single- -Carrier DVB- -T OFDM Power
700 mA
0
I
DQ
8K Mode DVB--T OFDM
64 QAM Data Carrier Modulation
5 Symbols
= 1400 mA
Figure 14. Single- -Carrier DVB- -T OFDM
2
P
Gain versus Output Power
1075 mA
out
, OUTPUT POWER (WATTS) AVG.
PEAK--TO--AVERAGE (dB)
4
1250 mA
V
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
DD
= 50 Vdc, f = 860 MHz
6
65
60
55
50
45
40
35
30
25
20
15
10
Figure 18. Single- -Carrier DVB- -T OFDM ACPR Power
5
0
10
TYPICAL CHARACTERISTICS — OFDM
Gain and Drain Efficiency versus Output Power
100
25_C
V
f = 860 MHz, 8K Mode OFDM
64 QAM Data Carrier Modulation
5 Symbols
DD
8
= 50 Vdc, I
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
T
C
= --30_C
85_C
10
P
out
DQ
, OUTPUT POWER (WATTS) AVG.
= 1400 mA
200
12
--50
--60
--70
--100
--110
--20
--30
--40
--50
--60
--70
--80
--90
20
--5
--30_C
975 mA
ACPR
V
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
Figure 17. Single- -Carrier DVB- -T OFDM ACPR
1400 mA
100
DD
I
Figure 15. 8K Mode DVB- -T OFDM Spectrum
DQ
25_C
= 50 Vdc, f = 860 MHz
--4
= 700 mA
G
ps
4 kHz BW
--3
η
85_C
P
D
1250 mA
out
8K Mode DVB--T OFDM
64 QAM Data Carrier Modulation, 5 Symbols
ACPR Measured at 4 MHz Offset
from Center Frequency
, OUTPUT POWER (WATTS) AVG.
versus Output Power
--2
300
f, FREQUENCY (MHz)
--46
--48
--50
--52
--54
--56
--58
--60
--62
--64
--66
--68
--70
--72
--1
1075 mA
7.61 MHz
0
1
100
4 kHz BW
2
3
4
200
5
9