MRF6VP3450HR6 Freescale Semiconductor, MRF6VP3450HR6 Datasheet - Page 7

• Manufacturer Part Number: MRF6VP3450HR6
• Description: MOSFET RF N-CH 450W NI-1230
• Manufacturer: Freescale Semiconductor

Specifications of MRF6VP3450HR6

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 860MHz
• Gain: 22.5dB
• Voltage - Rated: 110V
• Current Rating: 10µA
• Current - Test: 1.4A
• Voltage - Test: 50V
• Power - Output: 90W
• Package / Case: NI-1230
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
1000
23.5
22.5
21.5
20.5
19.5
18.5
24
23
22
21
20
19
18
17
16
100
24
23
22
21
20
19
18
10
Figure 4. Capacitance versus Drain- -Source Voltage
1
0
10
Figure 6. Pulsed Power Gain and Drain Efficiency
0
V
Pulse Width = 50 μsec, Duty Cycle = 2.5%
V
Pulse Width = 50 μsec, Duty Cycle = 2.5%
Note: Each side of device measured separately.
DD
DD
G
C
= 50 Vdc, I
= 50 Vdc, I
ps
rss
η
C
100
Figure 8. Pulsed Power Gain versus
C
D
iss
oss
P
10
P
V
out
DS
out
DQ
200
, OUTPUT POWER (WATTS) PULSED
DQ
, DRAIN--SOURCE VOLTAGE (VOLTS)
, OUTPUT POWER (WATTS) PULSED
versus Output Power
= 1200 mA, f = 860 MHz
= 1200 mA, f = 860 MHz
Output Power
Measured with ±30 mV(rms)ac @ 1 MHz
V
GS
300
20
= 0 Vdc
100
400
V
30
DD
= 40 V
500
TYPICAL CHARACTERISTICS
45 V
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
40
600
50 V
700
1000
50
60
55
50
45
40
35
30
25
20
15
10
5
0
25
24
23
22
21
20
19
18
10
Figure 9. Pulsed Power Gain and Drain Efficiency
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
100
V
Pulse Width = 50 μsec, Duty Cycle = 2.5%
85_C
T
10
DD
30
C
1
= --30_C
1
= 50 Vdc, I
P1dB = 57.15 dBm
(519 W)
P2dB = 57.65 dBm
(582 W)
Note: Each side of device measured separately.
Figure 7. Pulsed CW Output Power versus
31
T
C
= 25_C
25_C
P
32
out
DQ
Figure 5. DC Safe Operating Area
, OUTPUT POWER (WATTS) PULSED
V
versus Output Power
P3dB = 57.85 dBm (610 W)
= 1200 mA, f = 860 MHz
DS
33
, DRAIN--SOURCE VOLTAGE (VOLTS)
T
T
T
P
34
J
J
J
in
G
= 150_C
= 175_C
= 200_C
, INPUT POWER (dBm)
V
Pulse Width = 12 μsec, Duty Cycle = 1%
ps
Input Power
DD
35
100
= 50 Vdc, I
η
36
D
10
37
DQ
= 1200 mA, f = 860 MHz
38
--30_C
39
85_C
Ideal
25_C
40
Actual
1000
41
70
60
50
40
30
20
10
0
100
42
7