MRF6VP41KHR6 Freescale Semiconductor, MRF6VP41KHR6 Datasheet - Page 8

MOSFET RF N-CH 1000W NI1230

MRF6VP41KHR6

Manufacturer Part Number
MRF6VP41KHR6
Description
MOSFET RF N-CH 1000W NI1230
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6VP41KHR6

Transistor Type
2 N-Channel (Dual)
Frequency
450MHz
Gain
20dB
Voltage - Rated
110V
Current Rating
5mA
Current - Test
150mA
Voltage - Test
50V
Power - Output
1000W
Package / Case
NI-1230
Drain Source Voltage Vds
110V
Continuous Drain Current Id
5mA
Power Dissipation Pd
1kW
Operating Temperature Range
-65°C To +150°C
Rf Transistor Case
NI-1230
No. Of Pins
4
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
8
MRF6VP41KHR6 MRF6VP41KHSR6
Figure 15. Series Equivalent Source and Load Impedance — 450 MHz
Input
Matching
Network
Z
Z
source
load
MHz
450
f
V
Z
DD
= Test circuit impedance as measured from
= Test circuit impedance as measured from
o
= 2 Ω
= 50 Vdc, I
gate to gate, balanced configuration.
drain to drain, balanced configuration.
Z
source
+
--
0.86 + j1.06
Z
DQ
Device
Under
Test
source
= 150 mA, P
Z
source
f = 450 MHz
out
Z
= 1000 W Peak
load
--
+
1.58 + j1.22
Z
Z
load
load
f = 450 MHz
Output
Matching
Network
Freescale Semiconductor
RF Device Data

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