BLF6G10LS-200,112 NXP Semiconductors, BLF6G10LS-200,112 Datasheet - Page 24
BLF6G10LS-200,112
Manufacturer Part Number
BLF6G10LS-200,112
Description
IC BASESTATION FINAL SOT502B
Manufacturer
NXP Semiconductors
Specifications of BLF6G10LS-200,112
Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
871.5MHz
Gain
20.2dB
Voltage - Rated
65V
Current Rating
49A
Current - Test
1.4A
Voltage - Test
28V
Power - Output
40W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.06 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
49 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060895112
BLF6G10LS-200
BLF6G10LS-200
BLF6G10LS-200
BLF6G10LS-200
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Wireless connectivity
Wireless connectivity: Wi-Fi (802.11)
Performance comparison: BGW200 vs. BGW211
4
Product
BGW211
BGW200
Frequency bands
Modulations
Data rates
Transmit power (15 dBm)
Receive power
Standard
compliance
802.11g
802.11b
External
components
required
0
3
Design
footprint
(mm
BGW200
2.4 to 2.5 GHz
DBPSK, DQPSK, CCK (DSSS)
1, 2, 5.5, 11 Mbps
731 mW
415 mW
2
150
180
)
Standby
power
consumption
< 2 mW
< 2 mW
Bluetooth
1.1/1.2
coexistence QoS
•
•
•
•
ARM7
processor Integrated memory
•
•
BGW211
2.4 to 2.5 GHz
DBPSK, DQPSK, CCK (DSSS), OFDM
1, 2, 5.5 Mbps (802.11b)
6, 9, 12, 18, 24, 36, 48, 54 Mbps (802.11g)
550 mW (802.11b)
600 mW (802.11g)
300 mW (802.11b)
400 mW (802.11g)
1.25-MB SRAM
256-KB ROM
1.25-MB SRAM
256-KB ROM
Host
interfaces
Optimized
SDIO/SPI
Optimized
SDIO/SPI
SiP package
dimensions (mm)
10 x 15 x 1.3
10 x 15 x 1.3
Pins
68
68
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