BLF6G10LS-200,112 NXP Semiconductors, BLF6G10LS-200,112 Datasheet
BLF6G10LS-200,112
Specifications of BLF6G10LS-200,112
BLF6G10LS-200
BLF6G10LS-200
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BLF6G10LS-200,112 Summary of contents
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... BLF6G10LS-200 Power LDMOS transistor Rev. 01 — 18 January 2008 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz ...
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... RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multicarrier applications in the 800 MHz to 1000 MHz frequency range. 2. Pinning information Table 2. Pin [1] Connected to flange 3. Ordering information Table 3. Type number BLF6G10LS-200 - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg ...
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... RF performance at V class-AB production test circuit. Symbol P L(AV ACPR 7.1 Ruggedness in class-AB operation The BLF6G10LS-200 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 1400 mA BLF6G10LS-200_1 Preliminary data sheet Characteristics Conditions drain-source breakdown V voltage gate-source threshold voltage ...
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... 1400 mA 894 MHz typical values (dB 100 1400 mA 893.95 MHz power; typical values Rev. 01 — 18 January 2008 BLF6G10LS-200 Power LDMOS transistor 001aah526 70 D (%) 120 160 200 240 P (W) L 001aah534 60 D (%) 150 200 250 300 350 P (W) L(PEP) = 894.05 MHz. 2 © NXP B.V. 2008. All rights reserved. ...
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... MHz (5) 1500 MHz Fig 4. Third order intermodulation distortion as a 001aah537 50 D ACPR (%) (dBc (W) L(AV) = 886.5 MHz; 1 Fig 6. 2-carrier W-CDMA adjacent channel power ratio Rev. 01 — 18 January 2008 BLF6G10LS-200 Power LDMOS transistor (5) 60 (4) (1) (3) ( 100 150 200 250 893.95 MHz 894.05 MHz. DS ...
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... Table 8 for list of components. Fig 8. Component layout BLF6G10LS-200_1 Preliminary data sheet C14 C15 C14 C15 NXP IN 800 -1000 MHz V1.0 Rev. 01 — 18 January 2008 BLF6G10LS-200 Power LDMOS transistor C10 R1 L1 C13 C20 C4 C11 C12 = 3.5 and C10 L1 C13 C18 C19 C12 ...
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... TDK or capacitor of same quality. BLF6G10LS-200_1 Preliminary data sheet Figure 7 and Figure 8) Value 68 pF 330 nF 4.7 F 220 4 1.5 pF 9.1 ; 0.1 W Rev. 01 — 18 January 2008 BLF6G10LS-200 Power LDMOS transistor Remarks [1] [2] [2] [1] [1] [1] [1] Ferroxcube BDS 3/3/4.6-4S2 or equivalent © NXP B.V. 2008. All rights reserved ...
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... REFERENCES JEDEC JEITA Rev. 01 — 18 January 2008 BLF6G10LS-200 Power LDMOS transistor 1.70 20.70 9.91 0.25 1.45 20.45 9.65 0.067 0.815 0.390 0.010 0.057 ...
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... Power of the Dedicated Physical CHannel Radio Frequency Voltage Standing Wave Ratio Wideband Code Division Multiple Access Release date Data sheet status 20080118 Preliminary data sheet Rev. 01 — 18 January 2008 BLF6G10LS-200 Power LDMOS transistor Change notice Supersedes - - © NXP B.V. 2008. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 18 January 2008 BLF6G10LS-200 Power LDMOS transistor © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G10LS-200_1 All rights reserved. Date of release: 18 January 2008 ...