BLF6G10LS-200,112 NXP Semiconductors, BLF6G10LS-200,112 Datasheet - Page 5

• Manufacturer Part Number: BLF6G10LS-200,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-200,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 20.2dB
• Voltage - Rated: 65V
• Current Rating: 49A
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 40W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 49 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060895112; BLF6G10LS-200; BLF6G10LS-200

NXP Semiconductors
BLF6G10LS-200_1
Preliminary data sheet
Fig 3. Two-tone CW intermodulation distortion as
Fig 5. 2-carrier W-CDMA power gain and drain
(dBc)
IMD
(dB)
G
p
20
40
60
80
22
21
20
19
18
17
0
V
f
function of peak envelope load power; typical
values
V
f
efficiency as functions of average load power;
typical values
2
2
0
0
DS
DS
= 891.5 MHz; carrier spacing 5 MHz.
= 894.05 MHz.
= 28 V; I
= 28 V; I
50
7.4 2-carrier W-CDMA
G
D
100
Dq
Dq
p
= 1400 mA; f
20
= 1400 mA; f
150
200
1
1
= 893.95 MHz;
= 886.5 MHz;
40
250
P
L(AV)
001aah535
P
001aah537
300
IMD3
IMD5
IMD7
L(PEP)
(W)
Rev. 01 — 18 January 2008
350
(W)
60
50
40
30
20
10
0
(%)
D
Fig 4. Third order intermodulation distortion as a
Fig 6. 2-carrier W-CDMA adjacent channel power ratio
ACPR
IMD3
(dBc)
(dBc)
(1) 1300 MHz
(2) 1350 MHz
(3) 1400 MHz
(4) 1450 MHz
(5) 1500 MHz
20
40
60
80
20
40
60
80
0
0
V
function of peak envelope load power; typical
values
V
f
as function of average load power; typical
values
2
0
0
DS
DS
= 891.5 MHz; carrier spacing 5 MHz.
= 28 V; f
= 28 V; I
50
10
100
1
Dq
20
= 893.95 MHz; f
= 1400 mA; f
BLF6G10LS-200
150
30
200
Power LDMOS transistor
(5)
(4)
(1)
(3)
(2)
40
1
= 886.5 MHz;
2
= 894.05 MHz.
250
50
© NXP B.V. 2008. All rights reserved.
001aah536
P
001aah538
300
P
60
L(PEP)
L(AV)
(W)
350
(W)
70
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