BLF6G10LS-200,112 NXP Semiconductors, BLF6G10LS-200,112 Datasheet - Page 5
![IC BASESTATION FINAL SOT502B](/photos/5/63/56376/568-2-ldmost_sot-502b_sml.jpg)
BLF6G10LS-200,112
Manufacturer Part Number
BLF6G10LS-200,112
Description
IC BASESTATION FINAL SOT502B
Manufacturer
NXP Semiconductors
Specifications of BLF6G10LS-200,112
Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
871.5MHz
Gain
20.2dB
Voltage - Rated
65V
Current Rating
49A
Current - Test
1.4A
Voltage - Test
28V
Power - Output
40W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.06 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
49 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060895112
BLF6G10LS-200
BLF6G10LS-200
BLF6G10LS-200
BLF6G10LS-200
NXP Semiconductors
BLF6G10LS-200_1
Preliminary data sheet
Fig 3. Two-tone CW intermodulation distortion as
Fig 5. 2-carrier W-CDMA power gain and drain
(dBc)
IMD
(dB)
G
p
20
40
60
80
22
21
20
19
18
17
0
V
f
function of peak envelope load power; typical
values
V
f
efficiency as functions of average load power;
typical values
2
2
0
0
DS
DS
= 891.5 MHz; carrier spacing 5 MHz.
= 894.05 MHz.
= 28 V; I
= 28 V; I
50
7.4 2-carrier W-CDMA
G
D
100
Dq
Dq
p
= 1400 mA; f
20
= 1400 mA; f
150
200
1
1
= 893.95 MHz;
= 886.5 MHz;
40
250
P
L(AV)
001aah535
P
001aah537
300
IMD3
IMD5
IMD7
L(PEP)
(W)
Rev. 01 — 18 January 2008
350
(W)
60
50
40
30
20
10
0
(%)
D
Fig 4. Third order intermodulation distortion as a
Fig 6. 2-carrier W-CDMA adjacent channel power ratio
ACPR
IMD3
(dBc)
(dBc)
(1) 1300 MHz
(2) 1350 MHz
(3) 1400 MHz
(4) 1450 MHz
(5) 1500 MHz
20
40
60
80
20
40
60
80
0
0
V
function of peak envelope load power; typical
values
V
f
as function of average load power; typical
values
2
0
0
DS
DS
= 891.5 MHz; carrier spacing 5 MHz.
= 28 V; f
= 28 V; I
50
10
100
1
Dq
20
= 893.95 MHz; f
= 1400 mA; f
BLF6G10LS-200
150
30
200
Power LDMOS transistor
(5)
(4)
(1)
(3)
(2)
40
1
= 886.5 MHz;
2
= 894.05 MHz.
250
50
© NXP B.V. 2008. All rights reserved.
001aah536
P
001aah538
300
P
60
L(PEP)
L(AV)
(W)
350
(W)
70
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