BLF6G10LS-200,112 NXP Semiconductors, BLF6G10LS-200,112 Datasheet - Page 4
![IC BASESTATION FINAL SOT502B](/photos/5/63/56376/568-2-ldmost_sot-502b_sml.jpg)
BLF6G10LS-200,112
Manufacturer Part Number
BLF6G10LS-200,112
Description
IC BASESTATION FINAL SOT502B
Manufacturer
NXP Semiconductors
Specifications of BLF6G10LS-200,112
Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
871.5MHz
Gain
20.2dB
Voltage - Rated
65V
Current Rating
49A
Current - Test
1.4A
Voltage - Test
28V
Power - Output
40W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.06 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
49 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060895112
BLF6G10LS-200
BLF6G10LS-200
BLF6G10LS-200
BLF6G10LS-200
NXP Semiconductors
BLF6G10LS-200_1
Preliminary data sheet
7.2 One-tone CW
7.3 Two-tone CW
Fig 1. One-tone CW power gain and drain efficiency as functions of load power;
Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load
V
typical values
V
power; typical values
DS
DS
= 28 V; I
= 28 V; I
Dq
Dq
= 1400 mA; f = 894 MHz.
= 1400 mA; f
(dB)
(dB)
Rev. 01 — 18 January 2008
G
G
p
p
22
21
20
19
18
17
16
15
22
20
18
16
0
0
50
1
40
= 893.95 MHz; f
G
D
p
G
D
p
100
80
150
120
2
200
= 894.05 MHz.
160
250
BLF6G10LS-200
200
001aah526
001aah534
P
300
L(PEP)
P
L
(W)
240
350
(W)
Power LDMOS transistor
70
60
50
40
30
20
10
0
60
40
20
0
(%)
(%)
D
D
© NXP B.V. 2008. All rights reserved.
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