BFG97,115 NXP Semiconductors, BFG97,115 Datasheet - Page 7

• Manufacturer Part Number: BFG97,115
• Description: TRANS NPN 15V 5.5GHZ SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG97,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5.5GHz
• Power - Max: 1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 70mA, 10V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 25 @ 70mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5500 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 3V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 25
• Frequency (max): 5.5GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1986-2; 933919920115; BFG97 T/R

NXP Semiconductors
September 1995
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistor
(dB)
(dB)
d im
V
T
Fig.8
d 2
V
T
Fig.10 Second order intermodulation distortion as
amb
amb
CE
CE
= 10 V; V
= 10 V; V
45
50
55
60
65
70
45
50
55
60
65
70
= 25 C.
= 25 C.
20
20
Intermodulation distortion as a function of
collector current.
a function of collector current.
o
o
= 750 mV; f
= 50 dBmV; f
40
40
(pqr)
60
60
(pq)
= 443.25 MHz;
= 450 MHz;
80
80
100
100
I
I
C
C
MBB799
MBB800
(mA)
(mA)
120
120
7
handbook, halfpage
handbook, halfpage
(dB)
(dB)
d im
d 2
V
T
Fig.9
V
T
Fig.11 Second order intermodulation distortion as
CE
amb
CE
amb
= 10 V; V
= 10 V; V
45
50
55
60
65
70
45
50
55
60
65
70
= 25 C.
= 25 C.
20
20
Intermodulation distortion as a function of
collector current.
a function of collector current.
o
o
= 700 mV; f
= 50 dBmV; f
40
40
(pqr)
60
60
(pq)
= 793.25 MHz;
= 810 MHz;
80
80
Product specification
100
100
I
I
C
C
MBB801
MBB796
(mA)
BFG97
(mA)
120
120