MCH4009-TL-E SANYO, MCH4009-TL-E Datasheet

TRANS NPN 3.5V 40MA MCPH4

MCH4009-TL-E

Manufacturer Part Number
MCH4009-TL-E
Description
TRANS NPN 3.5V 40MA MCPH4
Manufacturer
SANYO
Datasheet

Specifications of MCH4009-TL-E

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
3.5V
Frequency - Transition
25GHz
Noise Figure (db Typ @ F)
1.1dB ~ 1.5dB @ 2GHz
Gain
9dB ~ 13.5dB
Power - Max
120mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 5mA, 1V
Current - Collector (ic) (max)
40mA
Mounting Type
Surface Mount
Package / Case
4-MCPH
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
869-1173-2
Ordering number : ENA0389
MCH4009
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : GG
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
1dB Compression Point
3rd Order Intercept Point
Low-noise use
High cut-off frequency : f T =25GHz typ (V CE =3V).
Low operating voltage.
High gain
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
: NF=1.1dB typ (f=2GHz).
: S21e
2
P O(1dB)
=17dB typ (f=2GHz).
Symbol
Symbol
S21e
S21e
V CBO
V CEO
V EBO
NPN Epitaxial Planar Silicon Transistor
UHF to X Band Low-Noise Amplifier
and OSC Applications
I CBO
I EBO
OIP 3
Tstg
h FE
Cre
P C
NF
I C
Tj
f T
2
2
1
2
SANYO Semiconductors
V CB =5V, I E =0A
V EB =1V, I C =0A
V CE =1V, I C =5mA
V CE =3V, I C =20mA
V CB =1V, f=1MHz
V CE =1V, I C =5mA, f=2GHz
V CE =3V, I C =20mA, f=2GHz
V CE =1V, I C =5mA, f=2GHz
V CE =3V, I C =20mA, f=2GHz
V CE =3V, I C =20mA, f=2GHz
MCH4009
Conditions
Conditions
82306 / 53106AB MS IM TB-00002266
DATA SHEET
min
50
20
9
Ratings
typ
0.15
13.5
13.5
Ratings
1.1
25
17
23
--55 to +150
max
120
150
120
No. A0389-1/13
3.5
2.5
1.0
1.0
1.5
10
40
dBm
dBm
GHz
Unit
mW
Unit
mA
dB
dB
dB
pF
V
V
V
C
C
A
A

Related parts for MCH4009-TL-E

MCH4009-TL-E Summary of contents

Page 1

... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN MCH4009 SANYO Semiconductors NPN Epitaxial Planar Silicon Transistor UHF to X Band Low-Noise Amplifier ...

Page 2

... Collector Emitter 3 : Base 4 : Emitter SANYO : MCPH4 Collector-to-Emitter Voltage 100 0.1 1.0 Collector Current MCH4009 Type No. Indication IT11105 0 100 0.1 IT11107 3 Pay attention Collector handling since Emitter liable to be affected Base static electricity due Emitter the high-frequency process adopted. Top view ...

Page 3

... S21e -- 1.0 10 Collector Current 0.1 1.0 10 Collector Current 150 120 100 100 125 Ambient Temperature MCH4009 100 f=2GHz 100 1.0 IT11109 =3V f=2GHz --10 --20 -- --40 100 IT11111 150 175 IT11113 f=2GHz Collector Current IT11110 Pout -- Pin =20mA f=2GHz --30 --20 -- Input Level, Pin -- dB IT11112 No ...

Page 4

... XTB 0 EG 1.11 XTI 3 CJE 250.0f VJE 23.00m MJE 21.60m TF 5.398p Schematic Llb *Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. MCH4009 Unit Parameter A XTF VTF ITF V PTF A CJC A VJC MJC XCJC ...

Page 5

... MCH4009 10.891 140.0 0.046 8.137 115.4 0.071 6.269 98.7 0.083 4.982 86.7 0.091 4.152 77.3 0.097 3.534 68.0 ...

Page 6

... MCH4009 16.105 129.6 0.040 10.494 105.3 0.056 7.518 90.9 0.067 5.820 80.6 0.076 4.763 72.3 0.085 4.030 64.4 ...

Page 7

... MCH4009 19.515 119.9 0.033 11.501 98.0 0.047 7.973 85.6 0.058 6.106 76.7 0.070 4.959 69.1 0.081 4.188 61.8 ...

Page 8

... MCH4009 19.643 115.2 0.031 11.260 94.8 0.044 7.725 83.4 0.056 5.906 74.8 0.068 4.789 67.3 0.082 4.041 60.3 ...

Page 9

... MCH4009 11.342 143.7 0.035 8.817 119.7 0.057 6.951 102.7 0.068 5.587 90.5 0.076 4.695 80.9 0.081 3.997 71.6 ...

Page 10

... MCH4009 17.369 134.5 0.030 11.870 109.5 0.047 8.647 94.5 0.056 6.729 84.0 0.064 5.523 75.6 0.072 4.678 67.6 ...

Page 11

... MCH4009 22.269 125.7 0.026 13.651 102.2 0.039 9.560 89.2 0.049 7.334 79.9 0.059 5.959 72.3 0.069 5.031 65.2 ...

Page 12

... MCH4009 23.946 121.7 0.024 14.101 99.2 0.036 9.747 87.1 0.047 7.456 78.4 0.057 6.032 70.9 0.068 5.086 64.0 ...

Page 13

... SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2006. Specifications and information herein are subject to change without notice. MCH4009 PS No. A0389-13/13 ...

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