BFP 460 E6327 Infineon Technologies, BFP 460 E6327 Datasheet

BFP 460 E6327

Manufacturer Part Number

BFP 460 E6327

Description

TRANSISTOR RF NPN 50MA SOT-343

Manufacturer

Infineon Technologies

Datasheet

1.BFP_460_E6433.pdf (11 pages)

Specifications of BFP 460 E6327

Package / Case

SC-70-4, SC-82-4, SOT-323-4, SOT-343

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (max)

5.8V

Frequency - Transition

22GHz

Noise Figure (db Typ @ F)

0.7dB ~ 1.2dB @ 100MHz ~ 3GHz

Gain

12.5dB ~ 26.5dB

Power - Max

230mW

Dc Current Gain (hfe) (min) @ Ic, Vce

90 @ 20mA, 3V

Current - Collector (ic) (max)

70mA

Mounting Type

Surface Mount

Dc Collector/base Gain Hfe Min

90 @ 20mA @ 3V

Minimum Operating Temperature

- 65 C

Mounting Style

SMD/SMT

Configuration

Single Dual Emitter

Transistor Polarity

NPN

Maximum Operating Frequency

22000 MHz (Typ)

Collector- Emitter Voltage Vceo Max

4.5 V

Emitter- Base Voltage Vebo

1.5 V

Continuous Collector Current

0.05 A

Power Dissipation

200 mW

Maximum Operating Temperature

+ 150 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

BFP 460 E6327
BFP460E6327INTR
BFP460E6327XT
SP000015119

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NPN Silicon RF Transistor

• General purpose low noise amplifier

• High ESD robustness, typical 1500V (HBM)

• Low minimum noise figure 1.1 dB at 1.8 GHz

• High linearity: output compression point

• Easy to use standard package with visible leads

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

ESD ( E lectro s tatic d ischarge) sensitive device, observe handling precaution!

Type

BFP460

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

Junction temperature

Ambient temperature

Storage temperature

T S is measured on the collector lead at the soldering point to the pcb

for low voltage, low current applications

OP1dB = 13 dBm @ 3V, 35mA, 1.8GHz

> 0 °C

≤ 92°C

≤ 0 °C

Marking

ABs

1 = E 2 = C 3 = E 4=B

Pin Configuration

Symbol

CEO

CES

CBO

EBO

tot

Stg

-65 ... 150

Value

230

150

4.5

4.2

1.5

Package

SOT343

2010-05-17

BFP460

Unit

°C

Related parts for BFP 460 E6327

BFP 460 E6327 Summary of contents

Page 1

NPN Silicon RF Transistor • General purpose low noise amplifier for low voltage, low current applications • High ESD robustness, typical 1500V (HBM) • Low minimum noise figure 1 1.8 GHz • High linearity: output compression point OP1dB ...

Page 2

Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...

Page 4

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) 1) Maximum power Gain mA 1 100 MHz mA ...

Page 5

Total power dissipation P tot 260 V 220 200 180 160 140 120 100 105 120 A Third order Intercept Point IP (Output =50 Ω ) ...

Page 6

Power gain Gms 20 15 |S21|² ...

Page 7

Third order Intercept Point IP =50 Ω ) (Output parameter 100MHz CE 32 dBm Source impedance for min. noise ...

Page 8

SPICE Parameter For the SPICE model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFP460 ...

Page 9

Package Outline +0.1 0.3 -0.05 4x 0.1 M Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 4 ...

Page 10

Datasheet Revision History: 17 May 2010 This datasheet replaces the revision from 14 August 2008. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been ...

Page 11

... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. ...

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